John Northrup's research interests include epitaxial growth, structure of surfaces and interfaces, point defects, extended defects, and transport in organic materials. Throughout his career, he has conducted theoretical research on topics related to the electronic and atomistic properties of matter. His computational work is based on first-principles methods, and is intended to provide insight into organic semiconductors such as pentacene and polythiophene as well as optoelectronic materials such as GaN.
John has published more than 160 papers, and is a co-inventor on 13 issued U.S. patents related to lasers and other electronic devices. John received his Ph.D. in Physics from the University of California at Berkeley. He is a Fellow of the American Physical Society. In 2012, he was honored as a Fellow of the Materials Research Society "for guiding insights based on first-principles calculations of total energies and band structures related to atomic arrangements in semiconductor materials, particularly on surfaces, heterointerfaces, dislocations, and chemical defects".
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in the news view all
Materials Research Society Announces 2012 MRS Fellows
19 March 2012 | release
Stanford-led research helps overcome barrier for organic electronics
10 November 2009 | Stanford Report
events view all
Nitride VECSELs as Light Sources for Biomedical Applications
9 June 2013 | San Jose, CA
Studies of Hole Transport in Mg-doped AlGaN Layers for Deep Ultraviolet Light Emitters
7 February 2013 | San Francisco, CA
In-Well Pumped Blue GaN-based Vertical-External-Cavity Surface-Emitting Lasers
18 October 2012 | Sapporo, Japan