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John Northrup

John Northrup's research interests include epitaxial growth, structure of surfaces and interfaces, point defects, extended defects, and transport in organic materials. Throughout his career, he has conducted theoretical research on topics related to the electronic and atomistic properties of matter. His computational work is based on first-principles methods, and is intended to provide insight into organic semiconductors such as pentacene and polythiophene as well as optoelectronic materials such as GaN.

John has published more than 160 papers, and is a co-inventor on 13 issued U.S. patents related to lasers and other electronic devices. John received his Ph.D. in Physics from the University of California at Berkeley. He is a Fellow of the American Physical Society. In 2012, he was honored as a Fellow of the Materials Research Society "for guiding insights based on first-principles calculations of total energies and band structures related to atomic arrangements in semiconductor materials, particularly on surfaces, heterointerfaces, dislocations, and chemical defects". 



PARC publications

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Radiation induced defects in poly(3-alkylthiophene)

Materials Research Society Spring 2014 Meeting

24 April 2014


High carrier injection efficiency at high carrier densities for UV light emitting devices

International Conference on Nitride Semiconductors

26 August 2013

Nitride VECSELs as light sources for biomedical applications

Invited talk for Conference on Lasers and Electro-Optics (CLEO) 2013

10 June 2013

In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers

Japanese Journal of Applied Physics, a special issue on Recent Advances in Nitride Semiconductors

August 2013


In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers

International Workshop on Nitride Semiconductors

18 October 2012

Deep UV AlGaN lasers

9th International Symposium on Semiconductor Light Emitting Devices

23 July 2012

Towards sub-300 nm AlGaN laser diodes on bulk AlN substrates

Spring Meeting of the German Physical Society

24 March 2012

Optically pumped UV lasers grown on bulk AlN substrates

physica status solidi c

February 2012

Sub-300 nm AlGaN lasers on bulk AlN substrates

SPIE Photonics West 2012

23 January 2012


Towards sub-300 nm laser diodes on bulk AlN substrates

International Semiconductor Device Research Symposium

7 December 2011

Optically pumped UV lasers grown on bulk AlN substrates

International Conference on Nitride Semiconductors

12 July 2011

Semi-polar nitride surfaces and heterostructures

physica status solidi (b)

March 2011


Electrical and environmental stability of organic transistors

Electrochemical Society Transactions

12 October 2010


Optically-pumped lasing of semipolar InGaN/GaN(1122) heterostructures

International Conference on Nitride Semiconductors (ICNS 8)

2009 October 18

Electric-field-induced gap states in pentacene

Advanced Materials

26 June 2009


Indium incorporation on c-plane and m-plane InGaN surfaces

International Workshop on Nitride Semiconductors; 2008 October

6 October 2008


Theoretical studies of P3HT, PQT, and PBTTT

2007 MRS Spring Meeting

9 April 2007



Recent developments in surface studies of GaN and AlN

Journal of Vacuum Science and Technology B

8 June 2005

Transport in polycrystalline polymer TFTs

Physical Review B

15 April 2005

Effect of Mg on the structure and growth of GaN(0001)

Applied Physics Letters

17 March 2005


Influence of surfaces on electrical properties of ZnO

Third ZnO Workshop, Sendai, Japan

8 October 2004


Reconstructions of the AlN(0001) surface

Physical Review B

21 November 2003


Effects of stoichiometry on point defects and impurities in gallium nitride

4th Symposium on Nonstoichiometric Compounds

1 December 2002

Surface energetics and growth of pentacene

Physical Review B

27 September 2002

Review of structure of bare and adsorbate covered GaN(0001) surfaces (Invited review)

MRS Internet Journal of Nitride Semiconductor Research

15 August 2002

GaN and related alloys

MRS Symposium Proceedings vol. 693



Novel configuration for acceptor hydrogen complexes in GaN

Fall Meeting of the Materials Research Society

26 November 2001

Novel configuration of Mg-H complexes in GaN

GaN and Related Alloys -- 2001; Symposium at the 2001 Fall Meeting of the Materials Research Society

26 November 2001

Screw dislocatons in GaN: the Ga-filled core model

Applied Physics Letters

16 April 2001

Performance characteristics of cw InGaN multiple-quantum-well laser diodes

Materials Research Society Fall Meeting

1 April 2001


Silicon at (001)GaN surfaces: surface structures and adatom kinetics

Fall Meeting of the Materials Research Society Symposium G: GaN and Related Alloys

27 November 2000

Faceted inversion domain boundary in GaN films doped with Mg

Applied Physics Letters

16 October 2000

Advances in blue laser diode development for high resolution printing

International Workshop on Nitrides

24 September 2000

CW operation of InGaN MQW laser diodes

Third International Symposium on Blue Laser and Light Emitting Diodes

5 March 2000

Design and performance of asymmetric waveguide nitride laser diodes

IEEE Journal of Quantum Electronics

1 February 2000

Structure of clean and arsenic-covered GaN(0001) surfaces

Journal of Crystal Growth

2 January 2000


Performance and optical gain characteristic of InGaN multiple quantum well laser diodes.

International Conference on Luminescense and Optical Gain Spectroscopy (ICL)

23 August 1999

Structure of the {11(2)_0} inversion domain boundary in GaN

20th International Conference on Defects in Semiconductors

26 July 1999


Energetics of AlN thin films on the Al203 surface

Applied Physics Letters

17 August 1998


Theory of the AlN/SiC(1010) interface

Physics Review B

15 October 1997

Energetics of H and NH2 on GaN(1010)

Physical Review B

15 August 1997

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