GaN and related alloys

MRS Symposium Proceedings vol. 693

2002

Studies of hole transport in Mg-doped AlGaN layers for deep-ultraviolet light emitters

SPIE Photonics West

7 February 2013

Two-dimensional deformation potential model of mobility in small molecule organic semiconductors: DNTT-C10 and BTBT-C12

Materials Research Society Fall Meeting 2012

26 November 2012

In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers

International Workshop on Nitride Semiconductors

18 October 2012

Deep UV AlGaN lasers

9th International Symposium on Semiconductor Light Emitting Devices

23 July 2012

The identification of recombination centers in organic solar cells

TechConnect World 2012

21 June 2012

Radiation induced recombination centers in organic solar cells

Physical Review B

May 2012

Towards sub-300 nm AlGaN laser diodes on bulk AlN substrates

Spring Meeting of the German Physical Society

24 March 2012

Optically pumped UV lasers grown on bulk AlN substrates

physica status solidi c

February 2012

Sub-300 nm AlGaN lasers on bulk AlN substrates

SPIE Photonics West 2012

23 January 2012

Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

Applied Physics Letters

9 January 2012

Towards sub-300 nm laser diodes on bulk AlN substrates

International Semiconductor Device Research Symposium

7 December 2011

In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers

Applied Physics Letters

November 2011

Pseudomorphically grown ultraviolet C photopumped lasers on bulk AlN substrates

Applied Physics Express

10 August 2011

Two-dimensional deformation potential model of mobility in small molecule organic semiconductors

Applied Physics Letters

August 2011

Optically pumped UV lasers grown on bulk AlN substrates

International Conference on Nitride Semiconductors

12 July 2011

Structure and sources of disorder in poly(3-hexylthiophene) crystals investigated by density-functional calculations with van der Waals interactions

Physical Review B

May 2011

Density of electronic states model for organic solar cells

2011 MRS Spring Meeting

27 April 2011

Photoconductivity measurements of the electronic structure of organic solar cells

Physical Review B

April 2011

Structural origin of gap states in semicrystalline polymers and the implications for charge transport

Physical Review B (Rapid Communications)

16 March 2011

Semi-polar nitride surfaces and heterostructures

physica status solidi (b)

March 2011

Electrical and environmental stability of organic transistors

Electrochemical Society Transactions

12 October 2010

Optically-pumped lasing of semipolar InGaN/GaN(1122) heterostructures

physica status solidi (c)

July 2010

Large modulation of carrier transport by grain-boundary molecular packing and microstructure in organic thin films

Nature Materials

8 November 2009

Optically-pumped lasing of semipolar InGaN/GaN(1122) heterostructures

International Conference on Nitride Semiconductors (ICNS 8)

2009 October 18

GaN and InGaN(112_2) surfaces: group-III adlayers and indium incorporation

Applied Physics Letters

28 September 2009

Electric-field-induced gap states in pentacene

Advanced Materials

26 June 2009

Impact of hydrogen on indium incorporation at m-plane and c-plane In(0.25)Ga(0.75)N surfaces: first-principles calculations

Physical Review B

15 January 2009

Theoretical and experimental investigations of a poly-alkylated-thieno[3,2-b]thiophene semiconductor

Journal of Applied Physics

15 October 2008

Indium incorporation on c-plane and m-plane InGaN surfaces

International Workshop on Nitride Semiconductors; 2008 October

6 October 2008

Hydrogen and magnesium incorporation on c-plane and m-plane GaN surfaces

Physical Review B

15 January 2008

Atomic and electronic structure of polymer organic semiconductors: P3HT, PQT, and PBTTT

Physical Review B

15 December 2007

Theoretical studies of P3HT, PQT, and PBTTT

2007 MRS Spring Meeting

9 April 2007

Microstructure foundations of high carrier mobility in polymers

2007 MRS Spring Meeting

9 April 2007

Effects of molecular oxygen and ozone on polythiophene-based thin-film transistors

Applied Physics Letters

20 March 2007

Influence of quantum well barriers on gain and threshold current in AlGaN lasers

Applied Physics Letters

9 March 2007

High carrier mobility polythiophene thin films: structure determination by experiment and theory

Advanced Materials

March 2007

Structure and electronic properties of oxidized surfaces of GaN(0001)

Applied Physics Letters

23 October 2006

Oxidized GaN(0001) surfaces studied by scanning tunneling microscopy and spectroscopy and first principles theory

Journal of Vacuum Science and Technology B

26 July 2006

Oxygen-rich GaN(1010) surfaces: first-principles total energy calculations

Physical Review B

15 March 2006

Metal-adlayer-stabilized ZnO(0001) surfaces: toward a new growth mode for oxides

Applied Physics Letters

30 September 2005

Recent developments in surface studies of GaN and AlN

Journal of Vacuum Science and Technology B

8 June 2005

Transport in polycrystalline polymer TFTs

Physical Review B

15 April 2005

Effect of Mg on the structure and growth of GaN(0001)

Applied Physics Letters

17 March 2005

Shallow electronic states induced by prismatic stacking faults in AlN and GaN

Applied Physics Letters

7 February 2005

Chemically ordered AlGaN alloys: spontaneous formation of natural quantum wells

Physical Review B

13 January 2005

Strong affinity of hydrogen for the GaN(000-1) surface: implications for MBE and MOCVD growth

Applied Physics Letters

18 October 2004

Influence of surfaces on electrical properties of ZnO

Third ZnO Workshop, Sendai, Japan

8 October 2004

Indium versus hydrogen-terminated GaN(0001): Surfactant effect of indium in a chemical vapor deposition environment

Applied Physics Letters

24 May 2004

Reconstructions of the AlN(0001) surface

Physical Review B

21 November 2003

Identification of hydrogen configurations in p-type GaN through first-principles calculations of vibrational frequencies

Physical Review B

15 August 2003

Gap states in organic semiconductors: hydrogen and oxygen induced states in pentacene

Physical Review B

15 July 2003

Magnesium incorporation at (0001) inversion domain boundaries in GaN

Applied Physics Letters

7 April 2003

Morphology and surface reconstructions of GaN(1100) surfaces

Applied Physics Letters

17 March 2003

Ab initio calculation of the electronic and optical properties of solid pentacene

Physical Review B

15 March 2003

Adatom kinetics on and below the surface: the existence of a new diffusion channel

Physical Review Letters

7 February 2003

Effects of stoichiometry on point defects and impurities in gallium nitride

4th Symposium on Nonstoichiometric Compounds

1 December 2002

Surface energetics and growth of pentacene

Physical Review B

27 September 2002

Review of structure of bare and adsorbate covered GaN(0001) surfaces (Invited review)

MRS Internet Journal of Nitride Semiconductor Research

15 August 2002

Theory of intrinsic and H-passivated screw dislocations in GaN

Physical Review B

15 July 2002

Adsorption and incorporation of silicon at GaN(0001) surfaces

Applied Physics Letters

18 March 2002

Novel configuration for acceptor hydrogen complexes in GaN

Fall Meeting of the Materials Research Society

26 November 2001

Novel configuration of Mg-H complexes in GaN

GaN and Related Alloys -- 2001; Symposium at the 2001 Fall Meeting of the Materials Research Society

26 November 2001

Entropy - driven stabilization of a novel configuration for acceptor-hydrogen complexes in GaN

Physical Review Letters

12 November 2001

Influence of microstructure on the carrier concentration in Mg-doped GaN films

Applied Physics Letters

22 October 2001

Incorporation of beryllium on the clean and indium-terminated GaN(0001) surface

Applied Physics Letters

7 May 2001

Screw dislocatons in GaN: the Ga-filled core model

Applied Physics Letters

16 April 2001

Performance characteristics of cw InGaN multiple-quantum-well laser diodes

Materials Research Society Fall Meeting

1 April 2001

Magnesium incorporation in GaN grown by molecular beam epitaxy

Applied Physics Letters

15 January 2001

Silicon at (001)GaN surfaces: surface structures and adatom kinetics

Fall Meeting of the Materials Research Society Symposium G: GaN and Related Alloys

27 November 2000

Faceted inversion domain boundary in GaN films doped with Mg

Applied Physics Letters

16 October 2000

Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates

Applied Physics Letters

25 September 2000

Advances in blue laser diode development for high resolution printing

International Workshop on Nitrides

24 September 2000

Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces

Physical Review Letters

28 August 2000

Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy

Journal of Vacuum Science & Technology B

1 July 2000

Structure of GaN(0001): the laterally contracted Ga bilayer model

Physical Review B

15 April 2000

CW operation of InGaN MQW laser diodes

Third International Symposium on Blue Laser and Light Emitting Diodes

5 March 2000

Design and performance of asymmetric waveguide nitride laser diodes

IEEE Journal of Quantum Electronics

1 February 2000

Structure of clean and arsenic-covered GaN(0001) surfaces

Journal of Crystal Growth

2 January 2000

Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures

Applied Physics Letters

20 December 1999

Indium-induced changes in GaN (0001) surface morphology

Physical Review B

15 September 1999

Performance and optical gain characteristic of InGaN multiple quantum well laser diodes.

International Conference on Luminescense and Optical Gain Spectroscopy (ICL)

23 August 1999

Room-temperature continous-wave operation of InGaN multiple quantum well laser diodes with an asymmetric waveguide structure

Applied Physics Letters

26 July 1999

Structure of the {11(2)_0} inversion domain boundary in GaN

20th International Conference on Defects in Semiconductors

26 July 1999

Room-temperature continuous-wave operation of InGaN multiple quantum well laser diodes with an asymmetric waveguide structure

Third International Conference on Nitride Semiconductors

5 July 1999

Inversion of wurtzite GaN (0001) by exposure to magnesium

Applied Physics Letters

14 June 1999

Surface energetics, pit formation and chemical ordering in InGaN alloys

Applied Physics Letters

19 April 1999

Energetics of AlN thin films on the Al203 surface

Applied Physics Letters

17 August 1998

Theory of the (12_10) prismatic stacking fault in GaN

Applied Physics Letters

4 May 1998

Possibility of a Mott-Hubbard insulating ground state on SiC(0001)

Physical Review B

15 February 1998

Theory of the AlN/SiC(1010) interface

Physics Review B

15 October 1997

Energetics of H and NH2 on GaN(1010)

Physical Review B

15 August 1997

Atomic structure and stability of AlN(0001) and AlN(000-1) surfaces

Physical Review B

15 May 1997

Energetics of AlN epitaxial wetting layers on SiC(0001)

Nitrides Symposium at the MRS 1996 Fall Meeting

2 December 1996

Theory of GaN (10-10) and (11-20) surfaces

Physical Review B

15 April 1996

Reflectance difference spectroscopy: Experiment and theory for the model system Si(001):As and application to Si(001)

Physical Review Letters

8 April 1996

Theory of surface reconstruction on III-V semiconductors: GaAs and GaN (invited talk)

American Physical Society

18 March 1996

Atomic arrangement at the AlN/SiC interface

Physical Review B

15 March 1996

Theory of the adatom-induced reconstruction of the SiC(0001) V3xV3 surface

Physical Review B [Rapid Communications]

15 December 1995

Comparison of heteroepitaxial growth using hydride and solid sources: atomic scale characterization of the interaction of As4, AsH3 and PH3 with Si surfaces

International Symposium on Atomically Controlled Surfaces and Interfaces

12 October 1995