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PARC publications
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novel electronics & systems
Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(11.2) layers
Journal of Crystal Growth
January 2011
optoelectronics and optics
Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(11.2) layers
Journal of Crystal Growth
January 2011
Nitride laser diodes with non-epitaxial cladding layers
IEEE Photonics Technology Letters
March 2010
Invited talk at Gallium Nitride Materials & Devices VI, SPIE Photonics West 2011
24 January 2011
Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates
SPIE Photonics West 2010: Novel In-Plane Semiconductor Lasers IX
25 January 2010
Optically-pumped lasing of semipolar InGaN/GaN(1122) heterostructures
physica status solidi (c)
July 2010
Optically-pumped lasing of semipolar InGaN/GaN(1122) heterostructures
International Conference on Nitride Semiconductors (ICNS 8)
2009 October 18
Metal-clad nitride semiconductor laser diodes
8th International Conference on Nitride Semiconductors
22 October 2009
Sub-300 nm UV LEDs with defect reduction layer and vertical-injection architecture
CLEO 2011
1 May 2011
In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers
Applied Physics Letters
November 2011
9th International Symposium on Semiconductor Light Emitting Devices
23 July 2012
In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers
International Workshop on Nitride Semiconductors
18 October 2012
Studies of hole transport in Mg-doped AlGaN layers for deep-ultraviolet light emitters
SPIE Photonics West
7 February 2013
Japanese Journal of Applied Physics
1 May 2006
printed and flexible electronics
Sensors and Actuators A
10 November 2007
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Nitride VECSELs as Light Sources for Biomedical Applications
9 June 2013 | San Jose, CA
Studies of Hole Transport in Mg-doped AlGaN Layers for Deep Ultraviolet Light Emitters
7 February 2013 | San Francisco, CA
In-Well Pumped Blue GaN-based Vertical-External-Cavity Surface-Emitting Lasers
18 October 2012 | Sapporo, Japan
