Studies of hole transport in Mg-doped AlGaN layers for deep-ultraviolet light emitters

SPIE Photonics West

7 February 2013

In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers

International Workshop on Nitride Semiconductors

18 October 2012

Deep UV AlGaN lasers

9th International Symposium on Semiconductor Light Emitting Devices

23 July 2012

Optical studies on homoepitaxial AlN

EXMATEC - Expert Evaluation & Control of Compound Semiconductor Materials & Technologies

31 May 2012

Towards sub-300 nm AlGaN laser diodes on bulk AlN substrates

Spring Meeting of the German Physical Society

24 March 2012

Optically pumped UV lasers grown on bulk AlN substrates

physica status solidi c

February 2012

Sub-300 nm AlGaN lasers on bulk AlN substrates

SPIE Photonics West 2012

23 January 2012

Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

Applied Physics Letters

9 January 2012

Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes

Applied Physics Letters

2011

Towards sub-300 nm laser diodes on bulk AlN substrates

International Semiconductor Device Research Symposium

7 December 2011

In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers

Applied Physics Letters

November 2011

Pseudomorphically grown ultraviolet C photopumped lasers on bulk AlN substrates

Applied Physics Express

10 August 2011

Optically pumped UV lasers grown on bulk AlN substrates

International Conference on Nitride Semiconductors

12 July 2011

AlGaN-based ultraviolet lasers - applications and materials challenges

Invited talk at CLEO 2011

1 May 2011

Sub-300 nm UV LEDs with defect reduction layer and vertical-injection architecture

CLEO 2011

1 May 2011

InAlGaN optical emitters: laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes

Invited talk at Gallium Nitride Materials & Devices VI, SPIE Photonics West 2011

24 January 2011

Optical polarization of UV-A and UV-B (In)(Al)GaN multiple quantum well light emitting diodes

Gallium Nitride Materials & Devices VI at SPIE Photonics West 2011

22 January 2011

Advances in group III-nitride-based deep UV light-emitting diode technology

Semiconductor Science & Technology

January 2011

Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

Applied Physics Letters

25 October 2010

Optically-pumped lasing of semipolar InGaN/GaN(1122) heterostructures

physica status solidi (c)

July 2010

Nitride laser diodes with non-epitaxial cladding layers

IEEE Photonics Technology Letters

March 2010

Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates

SPIE Photonics West 2010: Novel In-Plane Semiconductor Lasers IX

25 January 2010

Metal-clad nitride semiconductor laser diodes

8th International Conference on Nitride Semiconductors

22 October 2009

Optically-pumped lasing of semipolar InGaN/GaN(1122) heterostructures

International Conference on Nitride Semiconductors (ICNS 8)

2009 October 18

Silver-clad nitride semiconductor laser diode

Applied Physics Letters

26 January 2009

Ultraviolet laser diodes on sapphire and AlN substrates

Photonics West 2009

26 January 2009

Ultraviolet InAlGaN light emitting diodes grown on hydride vapor phase epitaxy AlGaN/sapphire templates

Japanese Journal of Applied Physics

1 May 2006

Gain and photoluminescence spectroscopy in violet and ultra-violet InAlGaN laser structures

Physica Status Solidi (Proceedings of IWN 2004)

1 February 2005

Gain spectroscopy in violet and ultraviolet InAlGaN laser structures

IWN 2004

19 July 2004