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Thomas Wunderer

Thomas focuses on optoelectronic devices based on group III-nitrides. His current research includes the design, fabrication, and testing of novel laser and LED structures.

Prior to joining PARC, Thomas worked at Fraunhofer USA in Lansing, Michigan, where he studied the thermal conductivity of thin films.

Thomas received a Ph.D. in Electrical Engineering from Ulm University, Germany, where his research focused on semipolar InGaN/GaN LEDs and laser structures. He holds 4 patents, has authored over 30 technical papers, and has made more than 50 international and national conference contributions.


PARC publications

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High carrier injection efficiency at high carrier densities for UV light emitting devices

International Conference on Nitride Semiconductors

26 August 2013

Nitride VECSELs as light sources for biomedical applications

Invited talk for Conference on Lasers and Electro-Optics (CLEO) 2013

10 June 2013

In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers

Japanese Journal of Applied Physics, a special issue on Recent Advances in Nitride Semiconductors

August 2013


In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers

International Workshop on Nitride Semiconductors

18 October 2012

Deep UV AlGaN lasers

9th International Symposium on Semiconductor Light Emitting Devices

23 July 2012

Optical studies on homoepitaxial AlN

EXMATEC - Expert Evaluation & Control of Compound Semiconductor Materials & Technologies

31 May 2012

Towards sub-300 nm AlGaN laser diodes on bulk AlN substrates

Spring Meeting of the German Physical Society

24 March 2012

Optically pumped UV lasers grown on bulk AlN substrates

physica status solidi c

February 2012

Sub-300 nm AlGaN lasers on bulk AlN substrates

SPIE Photonics West 2012

23 January 2012


Towards sub-300 nm laser diodes on bulk AlN substrates

International Semiconductor Device Research Symposium

7 December 2011

Optically pumped UV lasers grown on bulk AlN substrates

International Conference on Nitride Semiconductors

12 July 2011




other publications

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Three-dimensional GaN for semipolar light emitters

phys. stat. sol. (b) 248, 549, (2011).


Semipolar GaInN/GaN light-emitting diodes grown on honeycomb patterned substrates

phys. stat. sol. (c) 7, 2140, (2010).


Properties of blue and green InGaN/GaN quantum well emission on structured semipolar surfaces

Jpn. J. Appl. Phys. 48, 060201, (2009).

Fabrication of 3D InGaN/GaN structures providing semipolar GaN planes for efficient green light emission

phys. stat. sol. (c) 6, 490, (2009).


Bluish-green semipolar GaInN/GaN light emitting diodes on {1-101} GaN side facets

phys. stat. sol. (c) 5, 2059, (2008).

Optimization of semipolar GaInN/GaN blue/green light emitting diode structures on {1-101} GaN side facets

Gallium Nitride Materials and Devices III, ed. by H. Morkoc et al., Proc. of SPIE 6894, 68940V-1, (2008).


Time and locally resolved photoluminescence of semipolar GaInN/GaN facet light emitting diodes

Appl. Phys. Lett. 90, 171123, (2007).


Bright semipolar GaInN/GaN blue light emitting diode on side facets of selectively grown GaN stripes

Appl. Phys. Lett. 89, 041121, (2006).




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SPIE Photonics West 2014
4 February 2014 - 6 February 2014
The Moscone Center | San Francisco, CA