Creating the future of printed electronics

Flextech (FLEX2013)

29 January 2013

Red and infrared side by side semiconductor quantum well lasers integrated on GaAs

Applied Physics Letters

28 September 1998

Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching

Applied Physics Letters

30 March 1998

Characterization of AlGaInN heterostructures and laser diodes

In-Plane Semiconductor Lasers: From Ultraviolet to Mid-Infrared II

26 January 1998

Material characterizations for III-Nitride based light emitters

SPIE Photonics West Symposium on Optoelectronics, Light-Emitting diodes: Research, Manufacturing, and Applications II

24 January 1998

Application of blue diode lasers to printing

Materials Research Society Symposium

1 December 1997

Visible laser diodes for printing

Proceedings of the SPIE Conference on Laser Diodes and LED Applications III

1 February 1997

Characterization of OMVPE-grown AlGalnN heterostructures

Material Research Society Symposium III-V Nitrides

2 December 1996

Light sources for laser printing

Proceedings of the Society for Imaging Science and Technology

19 May 1996

Characterization of AlGaInN heterostructures grown by OMVPE

Electrochemical Society Meeting

5 May 1996

Reflectance difference spectroscopy: Experiment and theory for the model system Si(001):As and application to Si(001)

Physical Review Letters

8 April 1996

TE/TM cross-polarization laser diodes using tensile-strained quantum wells

SPIE ' 96

29 January 1996

Dual wavelength laser by selective intermixing of GaAs/AlGaAs quantum wells

SPIE 1996 Symposium on Lasers and Integrated Optoelectronics

27 January 1996

Fabrication of multi-wavelength lasers by selective intermixing of Si-doped GaAs/AlGaAs quantum wells

LEOS '95

30 October 1995

Interface structure of ZnS/Si(001) and comparison with ZnSe/Si(001) and GaAs/Si(001)

Physical Review B [Condensed Matter]

15 October 1995

Comparison of heteroepitaxial growth using hydride and solid sources: atomic scale characterization of the interaction of As4, AsH3 and PH3 with Si surfaces

International Symposium on Atomically Controlled Surfaces and Interfaces

12 October 1995

Comparison of heteroepitaxial growth using hydride and solid sources

Electronic Materials Conference

1 June 1995

Tensile-strained AlGaAsP- and InGaAsP-(AlGa)0.5In0.5P quantum well laser dodes for TM polarized emission in the wavelength range 650< λ<850nm.

IEEE Photonics Technology Letters

1 November 1994

Atomic scale structure of interfaces

MRS Symposium Proceedings vol. 159

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