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MRS Symposium Proceedings vol. 159

1990

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In-Plane Semiconductor Lasers: From Ultraviolet to Mid-Infrared II

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Characterization of AlGaInN heterostructures grown by OMVPE

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5 May 1996

Characterization of OMVPE-grown AlGalnN heterostructures

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2 December 1996

Comparison of heteroepitaxial growth using hydride and solid sources

Electronic Materials Conference

1 June 1995

Comparison of heteroepitaxial growth using hydride and solid sources: atomic scale characterization of the interaction of As4, AsH3 and PH3 with Si surfaces

International Symposium on Atomically Controlled Surfaces and Interfaces

12 October 1995

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LEOS '95

30 October 1995

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Physical Review B [Condensed Matter]

15 October 1995

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SPIE Photonics West Symposium on Optoelectronics, Light-Emitting diodes: Research, Manufacturing, and Applications II

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Red and infrared side by side semiconductor quantum well lasers integrated on GaAs

Applied Physics Letters

28 September 1998

Reflectance difference spectroscopy: Experiment and theory for the model system Si(001):As and application to Si(001)

Physical Review Letters

8 April 1996

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Tensile-strained AlGaAsP- and InGaAsP-(AlGa)0.5In0.5P quantum well laser dodes for TM polarized emission in the wavelength range 650< λ<850nm.

IEEE Photonics Technology Letters

1 November 1994

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