Dr. Noble Johnson is a Research Fellow and manager of PARC'S Optoelectronic Materials and Devices area, where he has guided the activities of a world-class R&D team that has developed laser diodes and light emitting diodes in the visible and UV spectral regions and made major contributions to fundamental understanding of the material and devices.
Noble has conducted experimental research in the general areas of electronic materials and devices and particularly in the following sub-fields: electronic defects in semiconductors (crystalline and amorphous), metal-insulator-semiconductor devices and processing, deep-level transient spectroscopy, hydrogen in semiconductors, plasma-assisted synthesis of materials, and the development of InGaAlN materials and devices for optoelectronic device applications.
Noble has published over 330 research papers in technical journals and conference proceedings, organized several topical and international conferences, served as an editor of five books, and is co-inventor on more than 11 patents. He joined PARC over two decades ago, and prior to that worked at SRI International in the Radiation Physics Group of the Physical Sciences Division. In 1986 he was a visiting lecturer at Princeton University and taught a graduate course on electronic defects in semiconductors. In 1987 he received a Distinguished Senior U.S. Scientist Award from the Alexander von Humboldt Foundation, Germany. In 1988 under the auspices of the Humboldt Foundation, Noble worked in residence at the Institute for Applied Physics, University of Erlangen-Nürnberg, Germany.
Noble received his Ph.D. from Princeton University under a National Defense Graduate Fellowship. He is a Fellow of the American Physical Society and a Fellow of the Institute of Electrical and Electronics Engineers.
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Nitride VECSELs as Light Sources for Biomedical Applications
9 June 2013 | San Jose, CA
Studies of Hole Transport in Mg-doped AlGaN Layers for Deep Ultraviolet Light Emitters
7 February 2013 | San Francisco, CA