Hydrogen passivation in nitrogen- and chlorine-doped ZnSe films grown by gas source molecular beam epitaxy

Applied Physics Letters

27 February 1995

Hydrogen passivation of defects in InGaAs/AlxGa1-xAs quantum wells

Defect Engineering in Semiconductor Growth, Processing, and Device Technology, Materials Research Society Symposium Proceedings Series, vol. 262

1992

Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films

Applied Physics Letters

21 June 1993

Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition

Applied Physics Letters

30 October 1995

Hydrogen passivation of nonradiative defects in InGaAs/AlxGa1-xAs quantum wells

Journal of Applied Physics

15 January 1993

Hydrogen passivation of shallow-acceptor impurities in p-type GaAs

Physical Review B

1986

Hydrogen passivation of Si and Be dopants in InAlAs

Advanced III-V Compound Semiconductor Growth, Processing and Devices, Materials Research Society Symposium Proceedings, vol. 240

1992

Hydrogen passivation of the oxygen-related thermal-donor defect in silicon

Applied Physics Letters

1986

Hydrogen-induced generation of acceptor-like defects in polycrystalline silicon

Physical Review Letters

13 November 1995

Hydrogen-induced metastable changes in the electrical conductivity of polycrystalline silicon

Physical Review Letters

23 May 1994

Hydrogen-induced platelets in silicon: infrared absorption and raman scattering

Physical Review B

15 June 1992

Hydrogen-induced platelets in silicon: separation of nucleation and growth

Proceedings of the 16th International Conference on Defects in Semiconductors

1992

Hydrogenation of defects at the Si-SiO2 interface

Insulating Films on Semiconductors

1981

Hydrogenation of gallium nitride

Materials Research Society Symposium Proceedings vol. 325

1994

Hydrogenation of p-type gallium nitride

Applied Physics Letters

25 April 1994

Hydrogenation of the 'new oxygen donor' traps in silicon

Applied Physics Letters

7 April 1986

Hydrogenation of wide-band-gap II-VI semiconductors

Applied Physics Letters

21 December 1992

Identification of deep-gap states in a-Si:H by photodepopulation-induced electron-spin resonance

Physical Review B

1985

Impulse photoconductivity of thin-film polycrystalline silicon

Journal of Applied Physics

1 May 1986

Impurity incorporation and doping efficiency in a-Si:H

Physical Review B

15 August 1990

In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers

International Workshop on Nitride Semiconductors

18 October 2012

In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers

Applied Physics Letters

November 2011

InAlGaN optical emitters: laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes

Invited talk at Gallium Nitride Materials & Devices VI, SPIE Photonics West 2011

24 January 2011

Influence of quantum well barriers on gain and threshold current in AlGaN lasers

Applied Physics Letters

9 March 2007

Influence of substrate treatments on diamond thin film nucleation

Thin Solid Films

1992

Influence of surfaces on electrical properties of ZnO

Third ZnO Workshop, Sendai, Japan

8 October 2004

InGaN light-emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off

Applied Physics Letters

30 October 2000

Integration of InGaN laser diodes with dissimilar substrates by laser lift-off

Fall 2000 Meeting of the Materials Research Society

27 November 2000

The integration of InGaN multiple-quantum-well laser diodes with copper substrates by laser lift-off

Japanese Journal of Applied Physics; Express Letters

1 December 2000

The integration of InGaN-based optoelectronics with dissimilar substrates by wafer bonding and laser lift-off

Spring 2001 MRS Meeting

16 April 2001

Interaction of hydrogen and deuterium with copper in GaAs

Applied Physics Letters

14 December 1992

Interdiffusion of In and Ga in InGaN quantum wells

Applied Physics Letters

31 August 1998

Interface traps and Pb centers in oxidized (100) silicon wafers

Applied Physics Letters

1986

Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon

Physical Review Letters

1986

Intrinsic stress in hydrogenated amorphous silicon deposited in a remote hydrogen plasma reactor

Journal of Applied Physics

15 March 1992

Introduction to "Hydrogen in Semiconductors"

Semiconductors and Semimetals, vol. 34

1991

Inverted order of acceptor and donor levels of monatomic hydrogen in silicon

Physical Review Letters

4 July 1994

Investigation of deep level defects in n-type GaN

Bulletin of the American Physical Society

1995

Isolated hydrogen in silicon - a large negative-U system

Proceedings of the 22nd International Conference on the Physics of Semiconductors

1995

Kinetics of gas-phase chemical reactions and growth of a-SiC:H films from silane and acetylene in a remote hydrogen plasma reactor

Amorphous Silicon Technology--1991, Materials Research Society Symposium Proceedings Series, vol. 219

1991

Kinetics of metastability in doped hydrogenated amorphous silicon

Philosophical Magazine B

1994

Kinetics of minority-carrier-enhanced dissociation of hydrogen-dopant complexes in semiconductors

Physical Review B

15 May 1992

Label-free flow-cytometry on a microfluidic chip based on native fluorescence

Joint Meeting of the European Society for Clinical Analysis (ESCCA) and the German Society of Cytometry (DGfZ)

16 September 2008

Large and composition-dependent band-gap bowing in In(x)Ga(1-x)N alloys

E-MRS Meeting

16 June 1998

Large band-gap bowing of InGaN alloys

Applied Physics Letters

23 May 1998

Laser induced crystal growth of silicon islands on amorphous substrates

Laser and Electron-Beam Solid Interactions and Materials Processing

1981

Laser-induced crystallization of silicon islands on amorphous substrates: multilayer structures

Applied Physics Letters

1981

Laser-induced crystallization of silicon on bulk amorphous substrates: an overview

Proceedings of the MRS Symposium on Laser-Solid Interactions and Transient Thermal Processing of Materials

1983

Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates

SPIE Photonics West 2010: Novel In-Plane Semiconductor Lasers IX

25 January 2010

Light-enhanced hydrogen diffusion in a-Si:H

Journal of Non-Crystalline Solids

1991

Light-enhanced hydrogen motion in a-Si:H

Physical Review Letters

4 November 1991

Light-induced creation of metastable paramagnetic defects in hydrogenated polycrystalline silicon

Physical Review Letters

25 October 1993

Local bonding structure of deuterium in single-crystal silicon determined by nuclear magnetic resonance

Physical Review B

15 August 1992

Local bonding structure of hydrogen in crystalline silicon: NMR and TEM studies

Defect Engineering in Semiconductor Growth, Processing, and Device Technology, Materials Research Society Symposium Proceedings Series, vol. 262

1992

Local vibrational modes in Mg-doped gallium nitride

Physical Review B

15 May 1994

Low-cost interrogation unit for Fiber Bragg Grating sensors

17th International Conference on Plastic Optical Fibers

25 August 2008

Low-cost interrogation unit for wavelength-encoded optical sensors

7th International Workshop on Structural Health Monitoring

9 September 2009

Low-temperature annealing and hydrogenation of defects at the Si-SiO2 interface

Journal of Vacuum Science and Technology

1981

Material characterizations for III-Nitride based light emitters

SPIE Photonics West Symposium on Optoelectronics, Light-Emitting diodes: Research, Manufacturing, and Applications II

24 January 1998

Materials characterization of optically pumped InGaN/GaN lasers by far field measurements and by Fourier analysis of the emission spectrum

MRS Fall Meeting. Symposium D: Nitride Semiconductors.

1 December 1997

Measurement and analysis of current transients in well-characterized a-Si:H

Journal de Physique

1981

Measurement of deep levels in hydrogenated amorphous silicon by transient voltage spectroscopy

Applied Physics Letters

1983

Measurement of gap states in a-Si:H by photocapacitance spectroscopy

Proceedings of the 17th International Conference on the Physics of Semiconductors

1985

Measurement of interface defect states at oxidized silicon surfaces by constant-capacitance DLTS

Journal of Vacuum Science and Technology

1979

Measurement of intrinsic stress in a-Si:H thin films deposited in a remote hydrogen plasma reactor

Amorphous Silicon Technology--1991, Materials Research Society Symposium Proceedings, vol. 219

1991

Measurement of semiconductor-insulator interface states by constant-capacitance deep-level transient spectroscopy (summary)

Journal of Vacuum Science and Technology

1982

Measurement of semiconductor-insulator interface states by constant-capacitance, deep-level transient spectroscopy

Journal of Vacuum Science and Technology

1982

Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon

Physical Review B

1985

Metastability of oxygen donors in AlGaN

Physical Review Letters

4 May 1998

Metastability of phosphorus and boron in hydrogenated amorphous silicon

Progress in Photovoltaics: Research and Applications

1993

Metastable defect kinetics in hydrogen passivated polycrystalline silicon

Amorphous Silicon Technology--1994, Materials Research Society Symposium Proceedings

1994

Micro-fluidic-based optical detection platform for characterizing fluorescing objects with integrated wavelength detection

IEEE LEOS 2008 Summer Topicals

21 July 2008

Microfluidic-based detection platform for on-the-flow analyte characterization

Invited seminar talk at the University of California, Santa Cruz

5 June 2008

Microfluidic-based detection platform for on-the-flow analyte characterization (invited talk)

Silicon Photonics V

23 January 2010

Microscopic identification of electronic defects in semiconductors

Materials Research Society Symposium Proceedings, vol. 46

1985

Microscopic identity of characteristic gap states at the interface in oxide-on-Si structures

Properties of Silicon, EMIS Datareviews

1988

Microstrain in laser-crystallized silicon islands on fused silica

Applied Physics Letters

1982

Microwave plasma oxidation of silicon

Journal of Electronic Materials

1985

MOCVD growth and characterization of AlGaInN heterostructures and laser diodes

European MRS Spring Meeting

16 June 1998

Monitoring CD4 in whole blood with an opto-fluidic detector based on spatially modulated fluorescence emission

Cytometry Part A

April 2011

n-type and p-type doping of ZnSe with gas source molecular beam epitaxy

Compound Semiconductor Epitaxy, Materials Research Society Symposium Proceedings vol. 340

1994

Native defects at the Si/SiO2 interface-amorphous silicon revisited

Applications of Surface Science

1985

Native fluorescence spectroscopy on a chip for bioagent detection

Invited talk at IPHT, Jena, Germany

3 January 2007

Native fluorescence spectroscopy on a chip for pathogen detection

Biodetection Technologies 2007

14 June 2007

Native fluorescence spectroscopy on-a-chip

Optics East 2007

3 October 2006

Near-band-edge cathodoluminescence studies of AlN homoepitaxial films

Applied Physics Letters

3 May 2004

Negative capacitance in forward biased a-Si:H p-i-n diodes

Applied Physics Letters

11 January 1999

Negative charge state of hydrogen in silicon

Physical Review B

15 June 1990

Neutralization of donor dopants and formation of hydrogen-induced defects in n-type silicon

Hydrogen in Semiconductors, vol. 34 in Semiconductors and Semimetals

1991

New metastable defects in GaAs

Applied Physics Letters

1987

New studies of the Si-SiO2 interface using Auger sputter profiling

Solid State Communications

1978

Nitride laser diodes with non-epitaxial cladding layers

IEEE Photonics Technology Letters

March 2010

NMOS dynamic shift registers in CO2 laser-crystallized silicon thin-films on fused quartz

Materials Research Society Symposium Proceedings vol. 33

1984

NMOS logic circuits in laser-crystallized silicon on quartz

Energy Beam-Solid Interactions and Transient Thermal Processing, MRS Symposium Proceedings vol. 23

1984

A novel concept for on-chip flow cytometry with improved signal-to-noise-ratio and "alignment-free" optics

ISAC XXIV International Congress 2008, Cytometry in the Age of Systems Biology

17 May 2008

Nucleation mechanism of hydrogen-induced platelets in single crystal and polycrystalline silicon

20th International Conference on Defects in Semiconductors

26 July 1999

Observations on the limits to p-type doping in ZnSe

Applied Physics Letters

22 August 1994

On-chip wavelength detection

DARPA Microsystems Technology Symposium

4 March 2007

On-the-flow characterizaion of cells based on native fluroescence spectroscopy

ISAC XXIV International Congress 2008, Cytometry in the Age of Systems Biology

17 May 2008

On-the-flow differentiation between cells based on native fluorescence spectroscopy on a chip

APS Meeting 2008

10 March 2008

Comments on ‘Agreement between classical and quantum mechanical solutions for a linear potential inside a one-dimensional infinite potential well

American Journal of Physics

December 1969

Compact calorimeter for measuring laser absorption coefficients of small samples

Review of Scientific Instruments

March 1976

The effect of illumination on the 10.6 micron absorption coefficient of electron-irradiated single crystal KCl

Physica Status Solidi (A)

Electron trapping in aluminum-implanted silicon dioxide films on silicon

Journal of Applied Physics

The influence of high-energy electron irradiation on the 10.6 micron absorption of mixed KCl crystals

Physica Status Solidi (A)

Position expectation values for an electron in an infinite tilted well

American Journal of Physics

April 1970

Thermal aging of Al thin films on GaAs

Journal of Vacuum Science and Technology

July 1976