A comparison of ion-implantation-induced deep levels in scanned electron-beam-annealed and CW laser-annealed silicon

Laser and Electron Beam Processing of Materials

1980

A test of the dangling-orbital versus overcoordination models for the Pb center at the Si-SiO2 interface

Applied Surface Science

1989

Absence of oxygen diffusion during hydrogen passivation of shallow-acceptor impurities in single-crystal silicon

Applied Physics Letters

1985

Accurate measurements of capture cross-sections of semiconductor insulator interface states by a trap-filling experiment: the charge-potential feedback effect

Journal of Applied Physics

1 August 1990

Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition

Applied Physics Letters

29 January 1996

Activation of acceptors in Mg-doped, p-type GaN

Materials Research Society Spring Meeting

8 April 1996

Advances in blue laser diode development for high resolution printing

International Workshop on Nitrides

24 September 2000

Advances in group III-nitride-based deep UV light-emitting diode technology

Semiconductor Science & Technology

January 2011

Advances in InAlGaN laser diode technology toward the development of UV optical sources (Invited paper)

Photonics West 2003: Novel In-Plane Semiconductor Lasers II (SPIE Proceedings Vol. 4995)

25 January 2003

Advances in laser diode development for high resolution and high speed printing

In-Plane Semiconductor Lasers IV; Photonics West

24 January 2000

Analysis of a conducting channel at the native zinc oxide surface

E-MRS Spring Meeting 2005, Strasbourg

3 June 2005

Analysis of a conducting channel at the native zinc oxide surface

Superlattices and Microstructures

15 September 2005

Analysis of implanted boron profiles across the Si-SiO2 interface by secondary ion mass spectrometry

Thin Films and Interfaces II, Materials Research Society Symposium Proceedings, vol. 25

1984

Analysis of the objectionable n-background conductivity in ZnO crystals

47th Electronic Materials Conference

24 June 2005

Auger sputter profiling studies of the Si-SiO2 interface

Semiconductor Characterization Techniques

1978

Auger sputter profiling studies of the Si-SiO2 interface

The Physics of SiO2 and Its Interfaces

1978

Band gap changes of GaN shocked to 13 Gpa

Applied Physics Letters

18 March 2002

Band gap shift of GaN under uniaxial strain compression

Proceedings of the Materials Research Society Fall Meeting 2001

26 November 2001

Blue diode lasers

Physics Today

October 2000

Blue lasers on copper substrates: the integration of InGaN laser diodes on dissimilar substrates by wafer bonding and laser liftoff (Invited paper)

SOTAPOCS XXXV of the Electrochemical Society Meeting

2 September 2001

Capture and tunnel emission of electrons by deep levels in ultrathin nitrided oxides on silicon

Applied Physics Letters

1984

Carrier-dependent hydrogen migration in hydrogenated amorphous silicon

Applied Physics Letters

15 February 1993

Characteristic defects at the Si-SiO2 interface

The Physics of MOS Insulators

1980

Characteristic electronic defects at the Si-SiO2 interface

Applied Physics Letters

1983

Characteristics of InGaN/AlGaN multiple quantum well laser diodes

IEEE Journal of Selected Topics in Quantum Electronics

1 May 1998

Characterization of a remote hydrogen plasma reactor with electron spin resonance

Journal of Applied Physics

15 February 1991

Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching

Applied Physics Letters

30 March 1998

Characterization of AlGaInN heterostructures and laser diodes

In-Plane Semiconductor Lasers: From Ultraviolet to Mid-Infrared II

26 January 1998

Characterization of AlGaInN heterostructures grown by OMVPE

Electrochemical Society Meeting

5 May 1996

Characterization of InGaN/AlGaN multiple quantum well laser diodes

SPIE Proceedings

25 January 1999

Characterization of intra-cavity reflections by Fourier transforming spectral data of optically pumped InGaN lasers

Applied Physics Letters

1 December 1997

Characterization of OMVPE-grown AlGalnN heterostructures

Material Research Society Symposium III-V Nitrides

2 December 1996

Charge states of hydrogen in p-type and n-type silicon

Defects in Semiconductors 15

1989

Charge transient and optical absorption measurements of characteristic gap states in phosphorus doped a-Si:H

Journal of Non-Crystalline Solids

1984

Charge trapping and impurity diffusion in nitrided oxides on silicon

Proceedings of the 1985 International Symposium on VLSI Technology, Systems and Applications

1985

Chip-size wavelength detectors

ISSSR 2006 (International Symposium on Spectral Sensing Research)

1 June 2006

Chip-size wavelength detectors

International Journal of High Speed Electronics and Systems

31 December 2007

Chip-size wavelength detectors and their use in biosensing

Invited talk at Bosch AG, Stuttgart, Siemens VDO Regensburg, Leoni AG Nuernberg

19 December 2005

Class identification of bio-molecules based on multi-color native fluorescence spectroscopy

Optics East 2006, Session SA201

2 October 2006

Class identification of bio-molecules based on multi-color native fluorescence spectroscopy

International Journal of High Speed Electronics and Systems

31 December 2007

Class identification of biomolecules based on multicolor native fluorescence spectroscopy

ISSSR 2006 (International Symposium on Spectral Sensing Research)

1 June 2006

Class identification of pathogens based on native fluorescence spectroscopy on-a-chip

Defense and Security Symposium (DSS) 2008

16 March 2008

Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(11.2) layers

Journal of Crystal Growth

January 2011

Comment on "Electron Paramagnetic Resonance of Molecular Hydrogen in Silicon"

Physical Review Letters

5 September 1994

Comment on "Hydrogen-oxygen interaction in silicon at around 50 degrees C"

Journal of Applied Physics

1 May 2000

Compact and fast interrogation unit for fiber Bragg grating sensors

SPIE Proceedings Vol. 6758

31 October 2007

Compact and fast read-out for wavelength-encoded biosensors

SPIE Proceedings

25 January 2010

Compact and high-resolution wavelength detectors for read-out of optical sensors

Optics East 2006, Session PT105: Photonic Sensing Technologies

3 October 2006

Compact optical characterization platform for detection of bio-molecules in fluidic and aerosol samples

ISSSR 2006 (International Symposium on Spectral Sensing Research)

1 June 2006

Compact optical characterization platform for detection of bio-molecules in fluidic and aerosol samples

International Journal of High Speed Electronics and Systems

March 2008

Compact optofluidic platform for detection of bio-molecules

Optics East 2006, Session LS303: Lab-on-a-Chip: Platforms, Devices, and Applications II

4 October 2006

Compact wavelength monitor for remote sensing applications suitable to precisely measure the wavelength of individual laser pulses

Invited paper for SPIE Defense, Security and Sensing 2013

29 April 2013

Compact, low-cost, and high-resolution interrogation unit for optical sensors

Applied Physics Letters

16 November 2006

Compact, microfluidic-based detection platform for on-the-flow analyte characterization

Condensed Matter & Biological Physics Seminar, 2008 April

4 April 2008

Comparison of the optical cross section for the Si dangling bond in a-Si:H and at the c-Si/SiO2 interface

Microscopic Identification of Electronic Defects in Semiconductors, MRS Proceedings Vol. 46

1985

Constant-capacitance DLTS measurement of defect-density profiles in semiconductors

Journal of Applied Physics

1979

Continuous wave InGaN MQW laser diodes on copper and diamond substrates

Compound Semiconductor

1 March 2001

Continuous-wave InGaN laser diodes on copper and diamond substrates

Journal of Materials Research

1 April 2002

Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates

Applied Physics Letters

26 February 2001

Continuous-wave operation of InGaN multiple-quantum-well laser diodes on copper substrates obtained by laser liftoff

IEEE Journal on Selected Topics in Quantum Electronics

1 March 2001

Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple quantum well laser diodes

Applied Physics Letters

14 April 2003

Correlated electrical and microstructural studies of recrystallized silicon thin films on bulk glass substrates

Laser and Electron-Beam Interactions with Solids

1982

Correlated paramagnetic defects and electronic deep levels at the oxidized silicon surface

Proceedings of the International Conference on Insulating Films on Semiconductors

1983

CW InGaN multiple-quantum-well laser diodes on copper and diamond substrates by laser lift-off

Materials Science & Engineering B

30 May 2002

CW INGaN multiple-quantum-well laser diodes on copper substrates

4th International Conference on Nitride Semiconductors

22 November 2001

CW operation of InGaN MQW laser diodes

Third International Symposium on Blue Laser and Light Emitting Diodes

5 March 2000

Deep level defects in GaN characterized by capacitance transient spectroscopies

Materials Research Society 1995 Spring Meeting

17 April 1995

Deep level defects in n-type GaN

Applied Physics Letters

25 July 1994

Deep level transient spectroscopy: a case study on GaAs

Characterization of Compound Semiconductor Processing

1995

Deep level transient spectroscopy: characterization and identification of electronic defects

Journal of Optical Engineering

1986

Deep level transient spectroscopy: defect characterization in semiconductor devices

Materials Characterization, MRS Proceedings Vol. 69

1987

Deep levels in cw laser-crystallized silicon thin films

Applied Physics Letters

1982

Deep levels in ion-implanted, CW laser-annealed silicon

Laser-Solid Interactions and Laser Processing-1978, AIP Conference Proceedings 50

1979

Deep levels in scanned electron-beam annealed silicon

Applied Physics Letters

1980

Deep-level distributions in hydrogenated amorphous silicon

Journal of Non-Crystalline Solids

1983

Deep-level transient spectroscopy: from characterization to electronic defect identification

Proceedings of the SPIE Conference on Spectroscopic Characterization Techniques for Semiconductor Technology II

1985

Defect and impurity engineered semiconductors and devices

Materials Research Society Symposium Proceedings vol. 378

17 April 1995

Defect and impurity engineered semiconductors and devices III

MRS Symposium Proceedings vol. 719

2002

Defect luminescence in CW laser-annealed silicon

Journal of Applied Physics

1979

Defect luminescence in CW laser-annealed silicon

Laser and Electron Beam Processing of Materials

1980

Defect metastability in hydrogen passivated polycrystalline silicon

Modern Physics Letters B

1994

Defect reduction by tilted zone crystallization of patterned silicon films on fused silica

Energy Beam-Solid Interactions and Transient Thermal Processing, Materials Research Society Symposium Proceedings, vol. 23

1984

Defect states in GaAs after rapid thermal annealing

Microscopic Identification of Electronic Defects in Semiconductors, MRS Proceedings Vol. 46

1985

Defects in single-crystal silicon induced by hydrogenation

Physical Review B

1987

Density of gap states of silicon grain boundaries determined by optical absorption

Applied Physics Letters

1983

Dependence of hydrogen incorporation in undoped a-Si:H and c-Si:H on hHydrogen dilution during PECVD

Amorphous Silicon Technology, Materials Research Society Proceedings, Vol. 118

1988

Deposited silicon nitride with low electron trapping rates

Journal of Applied Physics

1 July 1993

Deposition of a-Si:H thin films with a remote hydrogen plasma

Amorphous Silicon Technology--1989, Materials Research Society Symposium Proceedings, Vol. 149

1989

Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film

Journal of Crystal Growth

15 April 2005

Design and performance of asymmetric waveguide nitride laser diodes

IEEE Journal of Quantum Electronics

1 February 2000

Detection of electronic defects in strip-heater crystallized silicon thin films

Proceedings of the Materials Research Society Symposium on Laser-Solid Interactions and Transient Thermal Processing of Materials

1983

Deuterium at the Si-SiO2 interface detected by secondary ion mass spectrometry

Applied Physics Letters

1981

Deuterium passivation of grain-boundary dangling bonds in silicon thin films

Applied Physics Letters

1982

Devices and circuits in laser-crystallized silicon thin films on fused silica

Proceedings - The Electrochemical Society

1984

Diffusion of charged hydrogen in semiconductors

Materials Science Forum

1994

Diffusion of negatively charged hydrogen in silicon

Physical Review B

15 December 1992

Diffusivity of positively charged hydrogen in GaAs

Physical Review B

15 December 1993

Direct determination of the built-in polarization field in InGaN/GaN quantum wells

2002 International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002)

30 June 2002

Disordering of InGaN/GaN superlattices after high-pressure annealing

Fall 1998 Meeting of Materials Research Society

1 December 1998

Dissociation kinetics of hydrogen-neutralized Si donors and DX centers in AlGaAs

Proceedings of the 16th International Conference on Defects in Semiconductors

1992

Comments on ‘Agreement between classical and quantum mechanical solutions for a linear potential inside a one-dimensional infinite potential well

American Journal of Physics

December 1969

Compact calorimeter for measuring laser absorption coefficients of small samples

Review of Scientific Instruments

March 1976

The effect of illumination on the 10.6 micron absorption coefficient of electron-irradiated single crystal KCl

Physica Status Solidi (A)

Electron trapping in aluminum-implanted silicon dioxide films on silicon

Journal of Applied Physics

The influence of high-energy electron irradiation on the 10.6 micron absorption of mixed KCl crystals

Physica Status Solidi (A)

Position expectation values for an electron in an infinite tilted well

American Journal of Physics

April 1970

Thermal aging of Al thin films on GaAs

Journal of Vacuum Science and Technology

July 1976