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PROFILE:

Noble Johnson
Research Fellow
PARC publications
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2002
Quantitative analysis of absorption and field-induced absorption changes in InGaN/GaN quantum wells
Physica Status Solidi B
1 December 2002
The state of semiconductor light sources - blue laser diodes and beyond
COMDEX 2002
22 November 2002
Defect and impurity engineered semiconductors and devices III
MRS Symposium Proceedings vol. 719
2002
Direct determination of the built-in polarization field in InGaN/GaN quantum wells
2002 International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002)
30 June 2002
CW InGaN multiple-quantum-well laser diodes on copper and diamond substrates by laser lift-off
Materials Science & Engineering B
30 May 2002
Two-section InGaN multiple-quantum-well laser diode with integrated electro-absorption modulator
Applied Physics Letters
1 May 2002
Palo Alto Research Center (PARC) and Crystal IS demonstrate the first UV-LED on AlN substrates
Compound Semiconductor & III/V Review
4 April 2002
Progress in the preparation of aluminum nitride substrates from bulk crystals
MRS Spring Meeting 2002 Symposium Proceedings
1 April 2002
Continuous-wave InGaN laser diodes on copper and diamond substrates
Journal of Materials Research
1 April 2002
Applied Physics Letters
1 April 2002
2001
Band gap shift of GaN under uniaxial strain compression
Proceedings of the Materials Research Society Fall Meeting 2001
26 November 2001
Vibrational spectroscopy of GaN:Mg under pressure
Fall Meeting of the Materials Research Society
26 November 2001
CW INGaN multiple-quantum-well laser diodes on copper substrates
4th International Conference on Nitride Semiconductors
22 November 2001
4th International Conference on Nitride Semiconductors
22 November 2001
SOTAPOCS XXXV of the Electrochemical Society Meeting
2 September 2001
Spring 2001 MRS Meeting
16 April 2001
Performance characteristics of cw InGaN multiple-quantum-well laser diodes
Materials Research Society Fall Meeting
1 April 2001
IEEE Journal on Selected Topics in Quantum Electronics
1 March 2001
Continuous wave InGaN MQW laser diodes on copper and diamond substrates
Compound Semiconductor
1 March 2001
Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates
Applied Physics Letters
26 February 2001
2000
The integration of InGaN multiple-quantum-well laser diodes with copper substrates by laser lift-off
Japanese Journal of Applied Physics; Express Letters
1 December 2000
Integration of InGaN laser diodes with dissimilar substrates by laser lift-off
Fall 2000 Meeting of the Materials Research Society
27 November 2000
InGaN light-emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off
Applied Physics Letters
30 October 2000
27th International Symposium on Compound Semiconductors
2 October 2000
Gain characteristics of continuous wave InGaN multiple quantum laser diodes during life testing.
Journal of Applied Physics
1 October 2000
Applied Physics Letters
25 September 2000
Advances in blue laser diode development for high resolution printing
International Workshop on Nitrides
24 September 2000
Comment on "Hydrogen-oxygen interaction in silicon at around 50 degrees C"
Journal of Applied Physics
1 May 2000
CW operation of InGaN MQW laser diodes
Third International Symposium on Blue Laser and Light Emitting Diodes
5 March 2000
Design and performance of asymmetric waveguide nitride laser diodes
IEEE Journal of Quantum Electronics
1 February 2000
Advances in laser diode development for high resolution and high speed printing
In-Plane Semiconductor Lasers IV; Photonics West
24 January 2000
Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates
Applied Physics Letters
2 January 2000
1999
Fabrication of thin film InGaN light-emitting diode membranes by laser liftoff
Applied Physics Letters
6 September 1999
Performance and optical gain characteristic of InGaN multiple quantum well laser diodes.
International Conference on Luminescense and Optical Gain Spectroscopy (ICL)
23 August 1999
Effect of grown-in biaxal strain on deep level defects in SiC/Si epitaxial heterostructures
20th International Conference on Defects in Semiconductors
26 July 1999
Applied Physics Letters
26 July 1999
Nucleation mechanism of hydrogen-induced platelets in single crystal and polycrystalline silicon
20th International Conference on Defects in Semiconductors
26 July 1999
Third International Conference on Nitride Semiconductors
5 July 1999
Stripe-width dependence of threshold current for gain-guided AIGaInN laser diodes
Applied Physics Letters
18 January 1999
1998
Disordering of InGaN/GaN superlattices after high-pressure annealing
Fall 1998 Meeting of Materials Research Society
1 December 1998
MRS Internet Journal for Nitride Semiconductor Research; Conference Proceedings of Symposium G of the MRS 1998 Fall Meeting
30 November 1998
MOCVD growth and characterization of AlGaInN heterostructures and laser diodes
European MRS Spring Meeting
16 June 1998
Characteristics of InGaN/AlGaN multiple quantum well laser diodes
IEEE Journal of Selected Topics in Quantum Electronics
1 May 1998
Small-signal admittance of forward-biased a-Si:H p-i-n diodes by time domain analysis
Amorphous and Microcrystalline Silicon Technology
14 April 1998
Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching
Applied Physics Letters
30 March 1998
Characterization of AlGaInN heterostructures and laser diodes
In-Plane Semiconductor Lasers: From Ultraviolet to Mid-Infrared II
26 January 1998
Material characterizations for III-Nitride based light emitters
SPIE Photonics West Symposium on Optoelectronics, Light-Emitting diodes: Research, Manufacturing, and Applications II
24 January 1998
1997
Applied Physics Letters
1 December 1997
Phase separation in InGaN/GaN multiple quantum wells
Materials Research Society Symposium
1 December 1997
MRS Fall Meeting. Symposium D: Nitride Semiconductors.
1 December 1997
The Second International Conference on Nitride Semiconductors - ICSN'97
27 October 1997
Visible laser diodes for printing
Proceedings of the SPIE Conference on Laser Diodes and LED Applications III
1 February 1997
1996
Thickness dependence of electronic properties of GaN epi-layers
1996 Fall Meeting of the Materials Research Society
2 December 1996
Characterization of OMVPE-grown AlGalnN heterostructures
Material Research Society Symposium III-V Nitrides
2 December 1996
Applied Physics Letters
14 October 1996
Characterization of AlGaInN heterostructures grown by OMVPE
Electrochemical Society Meeting
5 May 1996
Journal of Non-Crystalline Solids
2 May 1996
Materials Research Society Spring Meeting
8 April 1996
Activation of acceptors in Mg-doped, p-type GaN
Materials Research Society Spring Meeting
8 April 1996
Structural characterization of high quality GaN films grown by hydride vapor phase epitaxy
Materials Research Society Spring Meeting
8 April 1996
Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition
Applied Physics Letters
12 February 1996
Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition
Applied Physics Letters
29 January 1996
1995
Deep level transient spectroscopy: a case study on GaAs
Characterization of Compound Semiconductor Processing
1995
Hydrogen-induced generation of acceptor-like defects in polycrystalline silicon
Physical Review Letters
13 November 1995
Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition
Applied Physics Letters
30 October 1995
Vibrational spectroscopy of group-II-acceptor-hydrogen complexes in GaP
Physical Review B
15 October 1995
Physical Review B [Condensed Matter]
15 July 1995
Physical Review B
15 July 1995
Reply to Comment on "Inverted Order of Acceptor and Donor Levels of Monatomic Hydrogen in Silicon"
Physical Review Letters
29 May 1995
Deep level defects in GaN characterized by capacitance transient spectroscopies
Materials Research Society 1995 Spring Meeting
17 April 1995
Defect and impurity engineered semiconductors and devices
Materials Research Society Symposium Proceedings vol. 378
17 April 1995
Effect of contacts on capacitance transient measurements on a-SiH
Procedings of the 1995 Materials Research Society Spring Meeting
17 April 1995
Photoemission capacitance transient spectroscopy on n-type GaN
Applied Physics Letters
13 March 1995
Applied Physics Letters
27 February 1995
Isolated hydrogen in silicon - a large negative-U system
Proceedings of the 22nd International Conference on the Physics of Semiconductors
1995
1994
Hydrogen bonding configurations determined from H evolution
Amorphous Silicon Technology--1994, Materials Research Society Symposium Proceedings vol. 336
1994
n-type and p-type doping of ZnSe with gas source molecular beam epitaxy
Compound Semiconductor Epitaxy, Materials Research Society Symposium Proceedings vol. 340
1994
Comment on "Electron Paramagnetic Resonance of Molecular Hydrogen in Silicon"
Physical Review Letters
5 September 1994
Inverted order of acceptor and donor levels of monatomic hydrogen in silicon
Physical Review Letters
4 July 1994
Hydrogen-induced metastable changes in the electrical conductivity of polycrystalline silicon
Physical Review Letters
23 May 1994
other publications
view publications by: date | title
1976
Compact calorimeter for measuring laser absorption coefficients of small samples
Review of Scientific Instruments
March 1976
1975
Physica Status Solidi (A)
Electron trapping in aluminum-implanted silicon dioxide films on silicon
Journal of Applied Physics
1970
Position expectation values for an electron in an infinite tilted well
American Journal of Physics
April 1970
1969
American Journal of Physics
December 1969
contact
focus areas
competencies
- optics & optical systems
- optoelectronics
- semiconductors
in the news
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ARPA-E awards $43M to 19 energy storage projects to advance electric vehicle and grid technologies
2 August 2012 | Green Car Congress
$43 Million for Transformational Storage Projects to Advance Electric Vehicle and Grid Technologies
2 August 2012 | announcement
PARC Orders Aixtron MOCVD System For Lasers and LEDs
31 March 2011 | Compound Semiconductor
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PARC Awarded $4M by ARPA-E to Develop Technologies to Improve Battery Performance
19 September 2012
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72nd Device Research Conference
23 June 2014 - 26 June 2014 | UC Santa Barbara, CA
SPIE Photonics West 2014
4 February 2014 - 6 February 2014
The Moscone Center | San Francisco, CA