Quantitative analysis of the polarization fields and absorption changes in InGan/GaN quantum wells with electroabsorption spectroscopy

Applied Physics Letters

1 April 2002

Continuous-wave InGaN laser diodes on copper and diamond substrates

Journal of Materials Research

1 April 2002

Band gap changes of GaN shocked to 13 Gpa

Applied Physics Letters

18 March 2002

Band gap shift of GaN under uniaxial strain compression

Proceedings of the Materials Research Society Fall Meeting 2001

26 November 2001

Vibrational spectroscopy of GaN:Mg under pressure

Fall Meeting of the Materials Research Society

26 November 2001

Electroabsorption spectroscopy - direct determination of the strong piezoelectric field in InGaN/GaN heterostructure diodes

4th International Conference on Nitride Semiconductors

22 November 2001

CW INGaN multiple-quantum-well laser diodes on copper substrates

4th International Conference on Nitride Semiconductors

22 November 2001

Energy levels of isolated interstitial hydrogen in silicon

Physical Review B

11 September 2001

Blue lasers on copper substrates: the integration of InGaN laser diodes on dissimilar substrates by wafer bonding and laser liftoff (Invited paper)

SOTAPOCS XXXV of the Electrochemical Society Meeting

2 September 2001

The integration of InGaN-based optoelectronics with dissimilar substrates by wafer bonding and laser lift-off

Spring 2001 MRS Meeting

16 April 2001

Performance characteristics of cw InGaN multiple-quantum-well laser diodes

Materials Research Society Fall Meeting

1 April 2001

Continuous wave InGaN MQW laser diodes on copper and diamond substrates

Compound Semiconductor

1 March 2001

Continuous-wave operation of InGaN multiple-quantum-well laser diodes on copper substrates obtained by laser liftoff

IEEE Journal on Selected Topics in Quantum Electronics

1 March 2001

Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates

Applied Physics Letters

26 February 2001

The integration of InGaN multiple-quantum-well laser diodes with copper substrates by laser lift-off

Japanese Journal of Applied Physics; Express Letters

1 December 2000

Integration of InGaN laser diodes with dissimilar substrates by laser lift-off

Fall 2000 Meeting of the Materials Research Society

27 November 2000

InGaN light-emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off

Applied Physics Letters

30 October 2000

Ubiquitous blue light: The integration of InGaN-based optoelectronics with dissimilar substrates by wafer bonding and laser lift-off

27th International Symposium on Compound Semiconductors

2 October 2000

Blue diode lasers

Physics Today

October 2000

Gain characteristics of continuous wave InGaN multiple quantum laser diodes during life testing.

Journal of Applied Physics

1 October 2000

Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates

Applied Physics Letters

25 September 2000

Advances in blue laser diode development for high resolution printing

International Workshop on Nitrides

24 September 2000

Comment on "Hydrogen-oxygen interaction in silicon at around 50 degrees C"

Journal of Applied Physics

1 May 2000

CW operation of InGaN MQW laser diodes

Third International Symposium on Blue Laser and Light Emitting Diodes

5 March 2000

Design and performance of asymmetric waveguide nitride laser diodes

IEEE Journal of Quantum Electronics

1 February 2000

Advances in laser diode development for high resolution and high speed printing

In-Plane Semiconductor Lasers IV; Photonics West

24 January 2000

Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates

Applied Physics Letters

2 January 2000

Fabrication of thin film InGaN light-emitting diode membranes by laser liftoff

Applied Physics Letters

6 September 1999

Performance and optical gain characteristic of InGaN multiple quantum well laser diodes.

International Conference on Luminescense and Optical Gain Spectroscopy (ICL)

23 August 1999

Nucleation mechanism of hydrogen-induced platelets in single crystal and polycrystalline silicon

20th International Conference on Defects in Semiconductors

26 July 1999

Room-temperature continous-wave operation of InGaN multiple quantum well laser diodes with an asymmetric waveguide structure

Applied Physics Letters

26 July 1999

Effect of grown-in biaxal strain on deep level defects in SiC/Si epitaxial heterostructures

20th International Conference on Defects in Semiconductors

26 July 1999

Room-temperature continuous-wave operation of InGaN multiple quantum well laser diodes with an asymmetric waveguide structure

Third International Conference on Nitride Semiconductors

5 July 1999

DX centers in AlGaN

International Journal of Modern Physics B

10 May 1999

Characterization of InGaN/AlGaN multiple quantum well laser diodes

SPIE Proceedings

25 January 1999

Stripe-width dependence of threshold current for gain-guided AIGaInN laser diodes

Applied Physics Letters

18 January 1999

Negative capacitance in forward biased a-Si:H p-i-n diodes

Applied Physics Letters

11 January 1999

Disordering of InGaN/GaN superlattices after high-pressure annealing

Fall 1998 Meeting of Materials Research Society

1 December 1998

Doping of AIGaN alloys

MRS Internet Journal for Nitride Semiconductor Research; Conference Proceedings of Symposium G of the MRS 1998 Fall Meeting

30 November 1998

Hydrogen in compound semiconductors

American Vacuum Society Symposium

2 November 1998

Interdiffusion of In and Ga in InGaN quantum wells

Applied Physics Letters

31 August 1998

MOCVD growth and characterization of AlGaInN heterostructures and laser diodes

European MRS Spring Meeting

16 June 1998

Large and composition-dependent band-gap bowing in In(x)Ga(1-x)N alloys

E-MRS Meeting

16 June 1998

Large band-gap bowing of InGaN alloys

Applied Physics Letters

23 May 1998

Metastability of oxygen donors in AlGaN

Physical Review Letters

4 May 1998

Characteristics of InGaN/AlGaN multiple quantum well laser diodes

IEEE Journal of Selected Topics in Quantum Electronics

1 May 1998

Small-signal admittance of forward-biased a-Si:H p-i-n diodes by time domain analysis

Amorphous and Microcrystalline Silicon Technology

14 April 1998

Phase separation in InGaN/GaN multiple quantum wells

Applied Physics Letters

6 April 1998

Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching

Applied Physics Letters

30 March 1998

Characterization of AlGaInN heterostructures and laser diodes

In-Plane Semiconductor Lasers: From Ultraviolet to Mid-Infrared II

26 January 1998

Material characterizations for III-Nitride based light emitters

SPIE Photonics West Symposium on Optoelectronics, Light-Emitting diodes: Research, Manufacturing, and Applications II

24 January 1998

Characterization of intra-cavity reflections by Fourier transforming spectral data of optically pumped InGaN lasers

Applied Physics Letters

1 December 1997

Phase separation in InGaN/GaN multiple quantum wells

Materials Research Society Symposium

1 December 1997

Materials characterization of optically pumped InGaN/GaN lasers by far field measurements and by Fourier analysis of the emission spectrum

MRS Fall Meeting. Symposium D: Nitride Semiconductors.

1 December 1997

Dry-etching and characterization of mirrors on III-nitride laser diode structures from chemically assisted ion beam etching

The Second International Conference on Nitride Semiconductors - ICSN'97

27 October 1997

Visible laser diodes for printing

Proceedings of the SPIE Conference on Laser Diodes and LED Applications III

1 February 1997

Characterization of OMVPE-grown AlGalnN heterostructures

Material Research Society Symposium III-V Nitrides

2 December 1996

Thickness dependence of electronic properties of GaN epi-layers

1996 Fall Meeting of the Materials Research Society

2 December 1996

A donor-like deep level defect in Al(0.12)Ga(0.88)N characterized by capacitance transient spectroscopies

Applied Physics Letters

14 October 1996

Characterization of AlGaInN heterostructures grown by OMVPE

Electrochemical Society Meeting

5 May 1996

Origin of the anomalous pulse-width dependence in capacitance transient measurements on n-type a-Si:H

Journal of Non-Crystalline Solids

2 May 1996

Structural characterization of high quality GaN films grown by hydride vapor phase epitaxy

Materials Research Society Spring Meeting

8 April 1996

Activation of acceptors in Mg-doped, p-type GaN

Materials Research Society Spring Meeting

8 April 1996

The effect of growth parameters on the quality of GaN thick films grown by hydride vapor phase epitaxy

Materials Research Society Spring Meeting

8 April 1996

Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition

Applied Physics Letters

12 February 1996

Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition

Applied Physics Letters

29 January 1996

p-type and n-type doping of ZnSe: effects of hydrogen incorporation

Journal of Crystal Growth

1995

Deep level transient spectroscopy: a case study on GaAs

Characterization of Compound Semiconductor Processing

1995

Hydrogen in GaN

MRS Symposium on Gallium Nitride and Related Materials

27 November 1995

Hydrogen-induced generation of acceptor-like defects in polycrystalline silicon

Physical Review Letters

13 November 1995

Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition

Applied Physics Letters

30 October 1995

Vibrational spectroscopy of group-II-acceptor-hydrogen complexes in GaP

Physical Review B

15 October 1995

Effect of non-ohmic back contacts in capacitance transient measurements on hydrogenated amorphous silicon

Physical Review B [Condensed Matter]

15 July 1995

Effect of non-ohmic back contacts in capacitance transient measurements on hydrogenated amorphous silicon

Physical Review B

15 July 1995

Reply to Comment on "Inverted Order of Acceptor and Donor Levels of Monatomic Hydrogen in Silicon"

Physical Review Letters

29 May 1995

Defect and impurity engineered semiconductors and devices

Materials Research Society Symposium Proceedings vol. 378

17 April 1995

Effect of contacts on capacitance transient measurements on a-SiH

Procedings of the 1995 Materials Research Society Spring Meeting

17 April 1995

Deep level defects in GaN characterized by capacitance transient spectroscopies

Materials Research Society 1995 Spring Meeting

17 April 1995

Photoemission capacitance transient spectroscopy on n-type GaN

Applied Physics Letters

13 March 1995

Hydrogen passivation in nitrogen- and chlorine-doped ZnSe films grown by gas source molecular beam epitaxy

Applied Physics Letters

27 February 1995

Isolated hydrogen in silicon - a large negative-U system

Proceedings of the 22nd International Conference on the Physics of Semiconductors

1995

Investigation of deep level defects in n-type GaN

Bulletin of the American Physical Society

1995

Hydrogen bonding configurations determined from H evolution

Amorphous Silicon Technology--1994, Materials Research Society Symposium Proceedings vol. 336

1994

n-type and p-type doping of ZnSe with gas source molecular beam epitaxy

Compound Semiconductor Epitaxy, Materials Research Society Symposium Proceedings vol. 340

1994

Spectroscopy of hydrogen-related complexes in GaP:Zn

Applied Physics Letters

24 October 1994

Comment on "Electron Paramagnetic Resonance of Molecular Hydrogen in Silicon"

Physical Review Letters

5 September 1994

Observations on the limits to p-type doping in ZnSe

Applied Physics Letters

22 August 1994

Deep level defects in n-type GaN

Applied Physics Letters

25 July 1994

Inverted order of acceptor and donor levels of monatomic hydrogen in silicon

Physical Review Letters

4 July 1994

Hydrogen-induced metastable changes in the electrical conductivity of polycrystalline silicon

Physical Review Letters

23 May 1994

Local vibrational modes in Mg-doped gallium nitride

Physical Review B

15 May 1994

Hydrogenation of p-type gallium nitride

Applied Physics Letters

25 April 1994

Self-limiting oxidation for fabricating sub-5 nm silicon nanowires

Applied Physics Letters

14 March 1994

Defect metastability in hydrogen passivated polycrystalline silicon

Modern Physics Letters B

1994

Evidence for defect metastability in hydrogen passivated fine grain polycrystalline silicon

Polycrystalline Semiconductors III -- Physics and Technology, Proceedings of the Third International Conference

1994

Diffusion of charged hydrogen in semiconductors

Materials Science Forum

1994

Metastable defect kinetics in hydrogen passivated polycrystalline silicon

Amorphous Silicon Technology--1994, Materials Research Society Symposium Proceedings

1994

Hydrogenation of gallium nitride

Materials Research Society Symposium Proceedings vol. 325

1994

Kinetics of metastability in doped hydrogenated amorphous silicon

Philosophical Magazine B

1994

Diffusivity of positively charged hydrogen in GaAs

Physical Review B

15 December 1993

Thermal aging of Al thin films on GaAs

Journal of Vacuum Science and Technology

July 1976

Compact calorimeter for measuring laser absorption coefficients of small samples

Review of Scientific Instruments

March 1976

The effect of illumination on the 10.6 micron absorption coefficient of electron-irradiated single crystal KCl

Physica Status Solidi (A)

The influence of high-energy electron irradiation on the 10.6 micron absorption of mixed KCl crystals

Physica Status Solidi (A)

Electron trapping in aluminum-implanted silicon dioxide films on silicon

Journal of Applied Physics

Position expectation values for an electron in an infinite tilted well

American Journal of Physics

April 1970

Comments on ‘Agreement between classical and quantum mechanical solutions for a linear potential inside a one-dimensional infinite potential well

American Journal of Physics

December 1969