DLTS studies on the 'new oxygen donor' in heat treated and hydrogenated Cz-grown silicon

Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon, MRS Proceedings Vol. 59

1986

Donor reactivation kinetics and hydrogen redistribution in the space charge layer of n-type silicon

Defect Engineering in Semiconductor Growth, Processing, and Device Technology, Materials Research Society Symposium Proceedings Series, vol. 262

1992

A donor-like deep level defect in Al(0.12)Ga(0.88)N characterized by capacitance transient spectroscopies

Applied Physics Letters

14 October 1996

Dopant and defect states in a-Si:H

Philosophical Magazine

1985

Doping of AIGaN alloys

MRS Internet Journal for Nitride Semiconductor Research; Conference Proceedings of Symposium G of the MRS 1998 Fall Meeting

30 November 1998

Dry-etching and characterization of mirrors on III-nitride laser diode structures from chemically assisted ion beam etching

The Second International Conference on Nitride Semiconductors - ICSN'97

27 October 1997

Dual-gate a-Si:H thin film transistors

IEEE Electron Device Letters

1982

DX centers in AlGaN

International Journal of Modern Physics B

10 May 1999

EBIC measurement and grain-boundary recombination in SOI polycrystalline silicon

IEEE Transactions on Electron Devices

July 1986

The effect of composition on the band gap of InGaN alloys

Applied Physics Letters

30 December 2002

Effect of composition on the band gap of strained InxGa1-xN alloys

Journal of Applied Physics

1 April 2003

Effect of contacts on capacitance transient measurements on a-SiH

Procedings of the 1995 Materials Research Society Spring Meeting

17 April 1995

Effect of grown-in biaxal strain on deep level defects in SiC/Si epitaxial heterostructures

20th International Conference on Defects in Semiconductors

26 July 1999

The effect of growth parameters on the quality of GaN thick films grown by hydride vapor phase epitaxy

Materials Research Society Spring Meeting

8 April 1996

Effect of helium dilution during plasma-enhanced deposition on electron trapping in silicon dioxide thin films

Applied Physics Letters

1992

Effect of non-ohmic back contacts in capacitance transient measurements on hydrogenated amorphous silicon

Physical Review B [Condensed Matter]

15 July 1995

Effect of non-ohmic back contacts in capacitance transient measurements on hydrogenated amorphous silicon

Physical Review B

15 July 1995

Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

Applied Physics Letters

9 January 2012

Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes

Applied Physics Letters

2011

Effects of an electrically conducting layer at the zinc oxide surface

Japanese Journal of Applied Physics

11 October 2005

Electric-field dependence of hydrogen neutralization of shallow-acceptor impurities in single-crystal silicon

Applied Physics Letters

1985

Electrical and optical characterization of metastable deep-level defects in GaAs

Physical Review B

15 August 1989

Electrical characterization of crystallized silicon thin films

Semiconductor-on-Insulator and Thin-film Transistor Technology, MRS Proceedings Vol. 53

1986

The electrical characterization of surfaces, interfaces, and contacts to a-Si:H

Philosophical Magazine B

1985

Electrical characterization of ZnO, including analysis of surface conductivity

SOXESS Workshop 2005

28 September 2005

Electrical characterization of ZnO, including analysis of surface conductivity

Applied Physics A

31 December 2007

Electroabsorption spectroscopy - direct determination of the strong piezoelectric field in InGaN/GaN heterostructure diodes

4th International Conference on Nitride Semiconductors

22 November 2001

Electron transport and conduction-band-tail states in a-Si:H deposited with a remote hydrogen plasma

Amorphous Silicon Technology -- 1993, Materials Research Society Symposium Proceedings

1993

Electron trapping properties of silicon nitride determined by avalanche injection

Amorphous Silicon Technology--1989, Materials Research Society Symposium Proceedings, Vol. 149

1989

Electron-beam-induced-current measurements in silicon-on-insulator films prepared by zone-melting recrystallization

Applied Physics Letters

1983

Electronic and optical properties of silicon dangling-bond defects at the Si-SiO2 interface

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface

1988

Electronic deep levels in laser-crystallized silicon thin-film MOS capacitors on fused silica

Materials Research Society Symposia Proceedings vol. 33

1984

Electronic defect levels in plasma-deposited amorphous silicon

Tetrahedrally Bonded Amorphous Semiconductors, AIP Conference Proceedings, vol. 73

1981

Electronic defect levels in self-implanted CW laser-annealed silicon

Applied Physics Letters

1979

Electronic defects in beam-crystallized silicon

Laser and Electron-Beam Interactions with Solids

1982

Electronic defects in CW transient thermal processed silicon

Semiconductors and Semimetals, Vol. 17

1984

Electronic defects in metalorganic GaAlAs

Defects in Semiconductors

1981

Electronic defects in silicon after transient isothermal annealing

Energy Beam-Solid Interactions and Transient Thermal Processing, MRS Symposium Proceedings, vol. 23

1984

Electronic defects in transient, thermally processed semiconductors

Energy Beam-Solid Interactions and Transient Thermal Processing/1984, MRS Symposium Proceedings Vol. 35

1985

Electronic properties of a characteristic discrete level at the Si-SiO2 interface

IEEE Transactions on Electron Devices

1978

Electronic traps and Pb centers at the Si/SiO2 interface: band-gap energy distribution

Journal of Applied Physics

1984

Energy beam-solid interactions and transient thermal processing

Materials Research Society Symposium Proceedings, vol. 23

1984

Energy levels of isolated interstitial hydrogen in silicon

Physical Review B

11 September 2001

Energy placement of the D- dangling-bond transition in a-Si:H from photocapacitance and photocurrent spectroscopies

Journal of Non-Crystalline Solids

1985

Energy-resolved DLTS measurement of interface states in MIS structures

Applied Physics Letters

1979

Energy-resolved DLTS measurement of interface states in MOS devices

IEEE Transactions on Electron Devices

1979

Enhancement of photoluminescence intensity in InGaAs/AlxGa1-xAs quantum wells by hydrogenation

Applied Physics Letters

4 May 1992

Evidence for an electrically conducting layer at the native zinc oxide surface

Annual Meeting of the German Physical Society (DPG)

4 March 2005

Evidence for an electrically conducting layer at the native zinc oxide surface

Nitride Seminar, Materials Dept., UCSB

4 February 2005

Evidence for defect metastability in hydrogen passivated fine grain polycrystalline silicon

Polycrystalline Semiconductors III -- Physics and Technology, Proceedings of the Third International Conference

1994

Evidence for multiphonon emission from interface states in MOS structures

Solid State Communications

1978

Fabrication of Si nanostructures for light emission study

Optical Properties of Low Dimensional Silicon Structures

1993

Fabrication of Si nanostructures for light emission study

Journal of Vacuum Science and Technology B

November/December 1992

Fabrication of thin film InGaN light-emitting diode membranes by laser liftoff

Applied Physics Letters

6 September 1999

Field-effect transistors in a-Si:H

IEEE Transactions on Electron Devices

1981

Flow cytometry on a chip

To be published in “Point of Care Diagnostics on a Chip”

2013

Fluorescence spectrometer-on-a-fluidic-chip

Lab on a Chip

1 January 2007

Fluorescence spectroscopy on a moving particle

2007 MRS Spring Meeting

9 April 2007

Fluorescence spectroscopy on moving particles

Invited talk at the Max Planck Research Group, Institute of Optics, Information and Photonics

1 March 2007

The Franz-Keldysh effect in shocked GaN:Mg

Applied Physics Letters

31 March 2003

Gain and photoluminescence spectroscopy in violet and ultra-violet InAlGaN laser structures

Physica Status Solidi (Proceedings of IWN 2004)

1 February 2005

Gain characteristics of continuous wave InGaN multiple quantum laser diodes during life testing.

Journal of Applied Physics

1 October 2000

Generation of Pb centers by high electric fields: thermochemical effects

Journal of the Electrochemical Society

September 1989

Grain boundaries in crystallized silicon thin films

Grain Boundaries in Semiconductors

1982

Grain boundaries in p-n junction diodes fabricated in laser-recrystallized silicon thin films

Applied Physics Letters

1981

Guiding light in fluids

Applied Physics Letters

14 April 2006

Handheld flow cytometer for rapid pathogen characterization in water

2012 Materials Research Society Fall Meeting

25 November 2012

High resolution TEM of hydrogen-induced microdefects in silicon

Microscopy of Semiconducting Materials

1987

High-electric-field transport in a-Si:H. I. Transient photoconductivity

Physical Review B

15 September 1992

High-electric-field transport in a-Si:H. II. Dark conductivity

Physical Review B

15 September 1992

High-gain photodetectors in thin-film transistors fabricated from laser-crystallized silicon on fused silica

IEEE Transactions on Electron Devices

1985

High-gain photodetectors in thin-film transistors fabricated from laser-crystallized silicon on fused silica

Technical Digest - International Electron Devices Meeting

1984

High-performance thin-film transistors in CO2 laser crystallized silicon on quartz

Proceedings of SPIE

1983

High-resolution scanning electron-beam annealing of ion-implanted silicon

Applied Physics Letters

1979

Highly photosensitive transistors in single-crystal silicon thin films on fused silica

Applied Physics Letters

1984

Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition

Applied Physics Letters

12 February 1996

Hydrogen bonding configurations determined from H evolution

Amorphous Silicon Technology--1994, Materials Research Society Symposium Proceedings vol. 336

1994

Hydrogen bonding in a-Si:H prepared by remote hydrogen plasma deposition

Amorphous Silicon Technology—1990, Materials Research Society Symposium Proceedings, vol. 192

1990

Hydrogen diffusion and dopant passivation in single-crystal silicon

18th International Conference on the Physics of Semiconductors

1987

Hydrogen immobilization in silicon p-n junctions

Physical Review B

1988

Hydrogen in compound semiconductors

American Vacuum Society Symposium

2 November 1998

Hydrogen in compound semiconductors

Defect Engineering in Semiconductor Growth, Processing, and Device Technology, Materials Research Society Symposium Proceedings Series, vol. 262

1992

Hydrogen in crystalline and amorphous silicon

Journal of Non-Crystalline Solids

1991

Hydrogen in crystalline semiconductors: a review of experimental results

Physica B

1991

Hydrogen in GaN

MRS Symposium on Gallium Nitride and Related Materials

27 November 1995

Hydrogen in semiconductors

Academic Press

1991

Hydrogen in tetrahedrally-bonded crystalline semiconductors

19th International Conference on the Physics of Semiconductors

1988

Hydrogen incorporation in silicon thin films deposited with a remote hydrogen plasma

Applied Physics Letters

8 May 1989

Hydrogen incorporation in undoped microcrystalline silicon

Applied Physics Letters

24 October 1988

Hydrogen interactions with defects in crystalline solids

Reviews of Modern Physics

April 1992

Hydrogen migration and complex formation in silicon

Shallow Impurities in Semiconductors 1988

1989

Hydrogen migration and electronic carriers in a-Si:H

Physical Review B

15 April 1993

Hydrogen migration and solubility in silicon

In Hydrogen in Semiconductors, Vol. 34 in Semiconductors and Semimetals

1991

Hydrogen migration in a pulsed electric field in a-Si:H

Journal of Non-Crystalline Solids

January 1993

Hydrogen neutralization and reactivation of chalcogen double-donor centers in silicon

Journal of Applied Physics

15 February 1990

Hydrogen neutralization of chalcogen double donors in silicon

Applied Physics Letters

1987

Hydrogen neutralization of chalcogen double-donor centers in single-crystal silicon

Defects in Electronic Materials, MRS Proceedings Series, Vol. 104

1988

Hydrogen neutralization of shallow-donor impurities in single-crystal silicon

Defects in Electronic Materials, MRS Proceedings Series, Vol. 104

1988

Hydrogen passivation and reactivation of DX centers in Se-doped and Si-doped AlGaAs--a comparison

Defect Engineering in Semiconductor Growth, Processing, and Device Technology, Materials Research Society Symposium Proceedings Series, vol. 262

1992

Hydrogen passivation and reactivation of Se dopants in AlGaAs

15th State-of-the-Art Program on Compound Semiconductors, The Electrochemical Society Proceedings Series, vol. 92-19

1992

Comments on ‘Agreement between classical and quantum mechanical solutions for a linear potential inside a one-dimensional infinite potential well

American Journal of Physics

December 1969

Compact calorimeter for measuring laser absorption coefficients of small samples

Review of Scientific Instruments

March 1976

The effect of illumination on the 10.6 micron absorption coefficient of electron-irradiated single crystal KCl

Physica Status Solidi (A)

Electron trapping in aluminum-implanted silicon dioxide films on silicon

Journal of Applied Physics

The influence of high-energy electron irradiation on the 10.6 micron absorption of mixed KCl crystals

Physica Status Solidi (A)

Position expectation values for an electron in an infinite tilted well

American Journal of Physics

April 1970

Thermal aging of Al thin films on GaAs

Journal of Vacuum Science and Technology

July 1976