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PROFILE:

 

Noble Johnson
Research Fellow

 

PARC publications

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technical publications

The Franz-Keldysh effect in shocked GaN:Mg

Applied Physics Letters

31 March 2003

Advances in InAlGaN laser diode technology toward the development of UV optical sources (Invited paper)

Photonics West 2003: Novel In-Plane Semiconductor Lasers II (SPIE Proceedings Vol. 4995)

25 January 2003

The effect of composition on the band gap of InGaN alloys

Applied Physics Letters

30 December 2002

Direct determination of the built-in polarization field in InGaN/GaN quantum wells

2002 International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002)

30 June 2002

Progress in the preparation of aluminum nitride substrates from bulk crystals

MRS Spring Meeting 2002 Symposium Proceedings

1 April 2002

Band gap changes of GaN shocked to 13 Gpa

Applied Physics Letters

18 March 2002

Band gap shift of GaN under uniaxial strain compression

Proceedings of the Materials Research Society Fall Meeting 2001

26 November 2001

Vibrational spectroscopy of GaN:Mg under pressure

Fall Meeting of the Materials Research Society

26 November 2001

CW INGaN multiple-quantum-well laser diodes on copper substrates

4th International Conference on Nitride Semiconductors

22 November 2001

Performance characteristics of cw InGaN multiple-quantum-well laser diodes

Materials Research Society Fall Meeting

1 April 2001

The integration of InGaN multiple-quantum-well laser diodes with copper substrates by laser lift-off

Japanese Journal of Applied Physics; Express Letters

1 December 2000

Integration of InGaN laser diodes with dissimilar substrates by laser lift-off

Fall 2000 Meeting of the Materials Research Society

27 November 2000

Blue diode lasers

Physics Today

October 2000

Advances in blue laser diode development for high resolution printing

International Workshop on Nitrides

24 September 2000

CW operation of InGaN MQW laser diodes

Third International Symposium on Blue Laser and Light Emitting Diodes

5 March 2000

Design and performance of asymmetric waveguide nitride laser diodes

IEEE Journal of Quantum Electronics

1 February 2000

Advances in laser diode development for high resolution and high speed printing

In-Plane Semiconductor Lasers IV; Photonics West

24 January 2000

Performance and optical gain characteristic of InGaN multiple quantum well laser diodes.

International Conference on Luminescense and Optical Gain Spectroscopy (ICL)

23 August 1999

Effect of grown-in biaxal strain on deep level defects in SiC/Si epitaxial heterostructures

20th International Conference on Defects in Semiconductors

26 July 1999

Nucleation mechanism of hydrogen-induced platelets in single crystal and polycrystalline silicon

20th International Conference on Defects in Semiconductors

26 July 1999

DX centers in AlGaN

International Journal of Modern Physics B

10 May 1999

Negative capacitance in forward biased a-Si:H p-i-n diodes

Applied Physics Letters

11 January 1999

Disordering of InGaN/GaN superlattices after high-pressure annealing

Fall 1998 Meeting of Materials Research Society

1 December 1998

Doping of AIGaN alloys

MRS Internet Journal for Nitride Semiconductor Research; Conference Proceedings of Symposium G of the MRS 1998 Fall Meeting

30 November 1998

Hydrogen in compound semiconductors

American Vacuum Society Symposium

2 November 1998

Interdiffusion of In and Ga in InGaN quantum wells

Applied Physics Letters

31 August 1998

Large band-gap bowing of InGaN alloys

Applied Physics Letters

23 May 1998

Metastability of oxygen donors in AlGaN

Physical Review Letters

4 May 1998

Characteristics of InGaN/AlGaN multiple quantum well laser diodes

IEEE Journal of Selected Topics in Quantum Electronics

1 May 1998

Small-signal admittance of forward-biased a-Si:H p-i-n diodes by time domain analysis

Amorphous and Microcrystalline Silicon Technology

14 April 1998

Phase separation in InGaN/GaN multiple quantum wells

Applied Physics Letters

6 April 1998

Characterization of AlGaInN heterostructures and laser diodes

In-Plane Semiconductor Lasers: From Ultraviolet to Mid-Infrared II

26 January 1998

Material characterizations for III-Nitride based light emitters

SPIE Photonics West Symposium on Optoelectronics, Light-Emitting diodes: Research, Manufacturing, and Applications II

24 January 1998

Phase separation in InGaN/GaN multiple quantum wells

Materials Research Society Symposium

1 December 1997

Dry-etching and characterization of mirrors on III-nitride laser diode structures from chemically assisted ion beam etching

The Second International Conference on Nitride Semiconductors - ICSN'97

27 October 1997

Visible laser diodes for printing

Proceedings of the SPIE Conference on Laser Diodes and LED Applications III

1 February 1997

Thickness dependence of electronic properties of GaN epi-layers

1996 Fall Meeting of the Materials Research Society

2 December 1996

Characterization of OMVPE-grown AlGalnN heterostructures

Material Research Society Symposium III-V Nitrides

2 December 1996

Characterization of AlGaInN heterostructures grown by OMVPE

Electrochemical Society Meeting

5 May 1996

Activation of acceptors in Mg-doped, p-type GaN

Materials Research Society Spring Meeting

8 April 1996

Deep level transient spectroscopy: a case study on GaAs

Characterization of Compound Semiconductor Processing

1995

Hydrogen in GaN

MRS Symposium on Gallium Nitride and Related Materials

27 November 1995

Effect of contacts on capacitance transient measurements on a-SiH

Procedings of the 1995 Materials Research Society Spring Meeting

17 April 1995

Deep level defects in GaN characterized by capacitance transient spectroscopies

Materials Research Society 1995 Spring Meeting

17 April 1995

Investigation of deep level defects in n-type GaN

Bulletin of the American Physical Society

1995

Isolated hydrogen in silicon - a large negative-U system

Proceedings of the 22nd International Conference on the Physics of Semiconductors

1995

n-type and p-type doping of ZnSe with gas source molecular beam epitaxy

Compound Semiconductor Epitaxy, Materials Research Society Symposium Proceedings vol. 340

1994

Hydrogen bonding configurations determined from H evolution

Amorphous Silicon Technology--1994, Materials Research Society Symposium Proceedings vol. 336

1994

Spectroscopy of hydrogen-related complexes in GaP:Zn

Applied Physics Letters

24 October 1994

Observations on the limits to p-type doping in ZnSe

Applied Physics Letters

22 August 1994

Deep level defects in n-type GaN

Applied Physics Letters

25 July 1994

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other publications

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1976

Thermal aging of Al thin films on GaAs

Journal of Vacuum Science and Technology

July 1976

1975

1970

1969

 

 

 

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