Kinetics of metastability in doped hydrogenated amorphous silicon

Philosophical Magazine B

1994

Diffusivity of positively charged hydrogen in GaAs

Physical Review B

15 December 1993

Self-limiting oxidation of Si nano-wires

Journal of Vacuum Science and Technology B

November/December 1993

Light-induced creation of metastable paramagnetic defects in hydrogenated polycrystalline silicon

Physical Review Letters

25 October 1993

Deposited silicon nitride with low electron trapping rates

Journal of Applied Physics

1 July 1993

Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films

Applied Physics Letters

21 June 1993

Hydrogen migration and electronic carriers in a-Si:H

Physical Review B

15 April 1993

Carrier-dependent hydrogen migration in hydrogenated amorphous silicon

Applied Physics Letters

15 February 1993

Hydrogen passivation of nonradiative defects in InGaAs/AlxGa1-xAs quantum wells

Journal of Applied Physics

15 January 1993

Hydrogen migration in a pulsed electric field in a-Si:H

Journal of Non-Crystalline Solids

January 1993

Fabrication of Si nanostructures for light emission study

Optical Properties of Low Dimensional Silicon Structures

1993

Silicon quantum wires -- oxidation and transport studies

Microcrystalline Semiconductors -- Materials Science and Devices, Materials Research Society Symposium Proceedings

1993

Electron transport and conduction-band-tail states in a-Si:H deposited with a remote hydrogen plasma

Amorphous Silicon Technology -- 1993, Materials Research Society Symposium Proceedings

1993

Metastability of phosphorus and boron in hydrogenated amorphous silicon

Progress in Photovoltaics: Research and Applications

1993

Thermodynamic equilibration kinetics of phosphorus and boron doped a-Si:H

Journal of Non-Crystalline Solids

1993

Hydrogenation of wide-band-gap II-VI semiconductors

Applied Physics Letters

21 December 1992

Diffusion of negatively charged hydrogen in silicon

Physical Review B

15 December 1992

Interaction of hydrogen and deuterium with copper in GaAs

Applied Physics Letters

14 December 1992

Fabrication of Si nanostructures for light emission study

Journal of Vacuum Science and Technology B

November/December 1992

High-electric-field transport in a-Si:H. I. Transient photoconductivity

Physical Review B

15 September 1992

High-electric-field transport in a-Si:H. II. Dark conductivity

Physical Review B

15 September 1992

Local bonding structure of deuterium in single-crystal silicon determined by nuclear magnetic resonance

Physical Review B

15 August 1992

Hydrogen-induced platelets in silicon: infrared absorption and raman scattering

Physical Review B

15 June 1992

Kinetics of minority-carrier-enhanced dissociation of hydrogen-dopant complexes in semiconductors

Physical Review B

15 May 1992

Enhancement of photoluminescence intensity in InGaAs/AlxGa1-xAs quantum wells by hydrogenation

Applied Physics Letters

4 May 1992

Hydrogen interactions with defects in crystalline solids

Reviews of Modern Physics

April 1992

Intrinsic stress in hydrogenated amorphous silicon deposited in a remote hydrogen plasma reactor

Journal of Applied Physics

15 March 1992

Effect of helium dilution during plasma-enhanced deposition on electron trapping in silicon dioxide thin films

Applied Physics Letters

1992

Local bonding structure of hydrogen in crystalline silicon: NMR and TEM studies

Defect Engineering in Semiconductor Growth, Processing, and Device Technology, Materials Research Society Symposium Proceedings Series, vol. 262

1992

Re-evaluation of electric-field enhanced emission measurements for use in type and charge state determination of point defects

Proceedings of the 16th International Conference on Defects in Semiconductors

1992

Dissociation kinetics of hydrogen-neutralized Si donors and DX centers in AlGaAs

Proceedings of the 16th International Conference on Defects in Semiconductors

1992

Influence of substrate treatments on diamond thin film nucleation

Thin Solid Films

1992

Hydrogen passivation and reactivation of DX centers in Se-doped and Si-doped AlGaAs--a comparison

Defect Engineering in Semiconductor Growth, Processing, and Device Technology, Materials Research Society Symposium Proceedings Series, vol. 262

1992

Hydrogen passivation and reactivation of Se dopants in AlGaAs

15th State-of-the-Art Program on Compound Semiconductors, The Electrochemical Society Proceedings Series, vol. 92-19

1992

Hydrogen passivation of Si and Be dopants in InAlAs

Advanced III-V Compound Semiconductor Growth, Processing and Devices, Materials Research Society Symposium Proceedings, vol. 240

1992

Hydrogen in compound semiconductors

Defect Engineering in Semiconductor Growth, Processing, and Device Technology, Materials Research Society Symposium Proceedings Series, vol. 262

1992

Donor reactivation kinetics and hydrogen redistribution in the space charge layer of n-type silicon

Defect Engineering in Semiconductor Growth, Processing, and Device Technology, Materials Research Society Symposium Proceedings Series, vol. 262

1992

Hydrogen-induced platelets in silicon: separation of nucleation and growth

Proceedings of the 16th International Conference on Defects in Semiconductors

1992

Hydrogen passivation of defects in InGaAs/AlxGa1-xAs quantum wells

Defect Engineering in Semiconductor Growth, Processing, and Device Technology, Materials Research Society Symposium Proceedings Series, vol. 262

1992

Introduction to "Hydrogen in Semiconductors"

Semiconductors and Semimetals, vol. 34

1991

Hydrogen migration and solubility in silicon

In Hydrogen in Semiconductors, Vol. 34 in Semiconductors and Semimetals

1991

Light-enhanced hydrogen motion in a-Si:H

Physical Review Letters

4 November 1991

Stability of a-Si:H thin films deposited at high temperatures with a remote hydrogen plasma

Applied Physics Letters

16 September 1991

Thermal dissociation energy of the Si-H complex in n-type GaAs

Applied Physics Letters

22 July 1991

Characterization of a remote hydrogen plasma reactor with electron spin resonance

Journal of Applied Physics

15 February 1991

Neutralization of donor dopants and formation of hydrogen-induced defects in n-type silicon

Hydrogen in Semiconductors, vol. 34 in Semiconductors and Semimetals

1991

Stability of a-Si:H deposited at high temperatures and hydrogen dilution in a remote hydrogen plasma reactor

Journal of Non-Crystalline Solids

1991

Light-enhanced hydrogen diffusion in a-Si:H

Journal of Non-Crystalline Solids

1991

Measurement of intrinsic stress in a-Si:H thin films deposited in a remote hydrogen plasma reactor

Amorphous Silicon Technology--1991, Materials Research Society Symposium Proceedings, vol. 219

1991

Workshop on Hydrogen Effects in InP and Related Compounds

Anneals des Télécommunications

1991

Hydrogen in crystalline and amorphous silicon

Journal of Non-Crystalline Solids

1991

Hydrogen in crystalline semiconductors: a review of experimental results

Physica B

1991

Kinetics of gas-phase chemical reactions and growth of a-SiC:H films from silane and acetylene in a remote hydrogen plasma reactor

Amorphous Silicon Technology--1991, Materials Research Society Symposium Proceedings Series, vol. 219

1991

Spatial profiling of electron traps in silicon nitride thin films

Journal of Applied Physics

15 November 1990

Impurity incorporation and doping efficiency in a-Si:H

Physical Review B

15 August 1990

Accurate measurements of capture cross-sections of semiconductor insulator interface states by a trap-filling experiment: the charge-potential feedback effect

Journal of Applied Physics

1 August 1990

Negative charge state of hydrogen in silicon

Physical Review B

15 June 1990

Hydrogen neutralization and reactivation of chalcogen double-donor centers in silicon

Journal of Applied Physics

15 February 1990

Hydrogen bonding in a-Si:H prepared by remote hydrogen plasma deposition

Amorphous Silicon Technology—1990, Materials Research Society Symposium Proceedings, vol. 192

1990

Pressure dependence of the Pb center measured by voltage transient spectroscopy

Semiconductor Science and Technology

December 1989

Generation of Pb centers by high electric fields: thermochemical effects

Journal of the Electrochemical Society

September 1989

Electrical and optical characterization of metastable deep-level defects in GaAs

Physical Review B

15 August 1989

Hydrogen incorporation in silicon thin films deposited with a remote hydrogen plasma

Applied Physics Letters

8 May 1989

Optical and electrical studies of interface traps in the Si/SiO2 system by modified junction space charge techniques

Physical Review B

15 March 1989

Charge states of hydrogen in p-type and n-type silicon

Defects in Semiconductors 15

1989

Deposition of a-Si:H thin films with a remote hydrogen plasma

Amorphous Silicon Technology--1989, Materials Research Society Symposium Proceedings, Vol. 149

1989

Hydrogen migration and complex formation in silicon

Shallow Impurities in Semiconductors 1988

1989

Pressure dependence of the Pb center at the <111> Si/SiO2 interface

Physical Review B

1989

Solid-source doping of a-Si:H thin films deposited with a remote hydrogen plasma

Journal of Non-Crystalline Solids

1989

A test of the dangling-orbital versus overcoordination models for the Pb center at the Si-SiO2 interface

Applied Surface Science

1989

Electron trapping properties of silicon nitride determined by avalanche injection

Amorphous Silicon Technology--1989, Materials Research Society Symposium Proceedings, Vol. 149

1989

Solid-source doping of hydrogenated amorphous silicon

Philosophical Magazine Letters

1989

Hydrogen incorporation in undoped microcrystalline silicon

Applied Physics Letters

24 October 1988

Revised role for the Poole-Frenkel effect in deep level characterization

Journal of Applied Physics

15 July 1988

Hydrogen immobilization in silicon p-n junctions

Physical Review B

1988

Hydrogen in tetrahedrally-bonded crystalline semiconductors

19th International Conference on the Physics of Semiconductors

1988

Hydrogen neutralization of shallow-donor impurities in single-crystal silicon

Defects in Electronic Materials, MRS Proceedings Series, Vol. 104

1988

Microscopic identity of characteristic gap states at the interface in oxide-on-Si structures

Properties of Silicon, EMIS Datareviews

1988

The structure of the boron-hydrogen complex in silicon

Defects in Electronic Materials, MRS Proceedings Series, vol. 104

1988

Hydrogen neutralization of chalcogen double-donor centers in single-crystal silicon

Defects in Electronic Materials, MRS Proceedings Series, Vol. 104

1988

Picosecond optical determination of carrier lifetime in polysilicon films

Polysilicon Films and Interfaces, MRS Symposium Proceedings, vol. 106

1988

Trapping time in processed polycrystalline silicon measured by picosecond time-resolved reflectivity

Journal of Applied Physics

1988

Dependence of hydrogen incorporation in undoped a-Si:H and c-Si:H on hHydrogen dilution during PECVD

Amorphous Silicon Technology, Materials Research Society Proceedings, Vol. 118

1988

Electronic and optical properties of silicon dangling-bond defects at the Si-SiO2 interface

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface

1988

Structure of the boron-hydrogen complex in crystalline silicon

Physical Review B

1987

Hydrogen neutralization of chalcogen double donors in silicon

Applied Physics Letters

1987

High resolution TEM of hydrogen-induced microdefects in silicon

Microscopy of Semiconducting Materials

1987

New metastable defects in GaAs

Applied Physics Letters

1987

Tunable electroabsorption and electroluminescence in GaAs doping superlattices

Applied Physics Letters

1987

Tunable electroabsorption and electroluminescence in GaAs doping superlattices

Proceedings of the SPIE Conference on Quantum Well and Superlattice Physics

1987

The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface

Journal of Applied Physics

1987

Tunable electroabsorption and electro-luminescence in GaAs doping superlattices

Superlattices and Micro-structures

1987

Deep level transient spectroscopy: defect characterization in semiconductor devices

Materials Characterization, MRS Proceedings Vol. 69

1987

Defects in single-crystal silicon induced by hydrogenation

Physical Review B

1987

Hydrogen diffusion and dopant passivation in single-crystal silicon

18th International Conference on the Physics of Semiconductors

1987

Reply to comments on interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon

Physical Review Letters

1987

EBIC measurement and grain-boundary recombination in SOI polycrystalline silicon

IEEE Transactions on Electron Devices

July 1986

Impulse photoconductivity of thin-film polycrystalline silicon

Journal of Applied Physics

1 May 1986

Hydrogenation of the 'new oxygen donor' traps in silicon

Applied Physics Letters

7 April 1986

Photoconduction in thin-film transistors fabricated from laser-crystallized silicon on fused quartz

Semiconductor-on-Insulator and Thin-film Transistor Technology, MRS Proceedings Vol. 53

1986

Thermal aging of Al thin films on GaAs

Journal of Vacuum Science and Technology

July 1976

Compact calorimeter for measuring laser absorption coefficients of small samples

Review of Scientific Instruments

March 1976

The effect of illumination on the 10.6 micron absorption coefficient of electron-irradiated single crystal KCl

Physica Status Solidi (A)

The influence of high-energy electron irradiation on the 10.6 micron absorption of mixed KCl crystals

Physica Status Solidi (A)

Electron trapping in aluminum-implanted silicon dioxide films on silicon

Journal of Applied Physics

Position expectation values for an electron in an infinite tilted well

American Journal of Physics

April 1970

Comments on ‘Agreement between classical and quantum mechanical solutions for a linear potential inside a one-dimensional infinite potential well

American Journal of Physics

December 1969