Hydrogen passivation of the oxygen-related thermal-donor defect in silicon

Applied Physics Letters

1986

Hydrogen passivation of shallow-acceptor impurities in p-type GaAs

Physical Review B

1986

Photoconduction in thin-film transistors fabricated from laser-crystallized silicon on fused quartz

Semiconductor-on-Insulator and Thin-film Transistor Technology, MRS Proceedings Vol. 53

1986

Thin-film transistor technology for large-area integrated circuits

IEEE ElectroTechnology Review

1986

Interface traps and Pb centers in oxidized (100) silicon wafers

Applied Physics Letters

1986

DLTS studies on the 'new oxygen donor' in heat treated and hydrogenated Cz-grown silicon

Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon, MRS Proceedings Vol. 59

1986

Deep level transient spectroscopy: characterization and identification of electronic defects

Journal of Optical Engineering

1986

Electrical characterization of crystallized silicon thin films

Semiconductor-on-Insulator and Thin-film Transistor Technology, MRS Proceedings Vol. 53

1986

Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon

Physical Review B

1985

Microscopic identification of electronic defects in semiconductors

Materials Research Society Symposium Proceedings, vol. 46

1985

Optical absorption by electronic defects at the Si-SiO2 interface

Journal of Electronic Materials

1985

Optical spectroscopy of the trivalent silicon defect at the Si-SiO2 interface

Physical Review B

1985

Defect states in GaAs after rapid thermal annealing

Microscopic Identification of Electronic Defects in Semiconductors, MRS Proceedings Vol. 46

1985

Dopant and defect states in a-Si:H

Philosophical Magazine

1985

The electrical characterization of surfaces, interfaces, and contacts to a-Si:H

Philosophical Magazine B

1985

Measurement of gap states in a-Si:H by photocapacitance spectroscopy

Proceedings of the 17th International Conference on the Physics of Semiconductors

1985

Identification of deep-gap states in a-Si:H by photodepopulation-induced electron-spin resonance

Physical Review B

1985

Optically-heated zone crystal growth of silicon thin films on amorphous substrates

Silicon-on-Insulator: Its Technology and Applications

1985

Native defects at the Si/SiO2 interface-amorphous silicon revisited

Applications of Surface Science

1985

Charge trapping and impurity diffusion in nitrided oxides on silicon

Proceedings of the 1985 International Symposium on VLSI Technology, Systems and Applications

1985

High-gain photodetectors in thin-film transistors fabricated from laser-crystallized silicon on fused silica

IEEE Transactions on Electron Devices

1985

Microwave plasma oxidation of silicon

Journal of Electronic Materials

1985

Comparison of the optical cross section for the Si dangling bond in a-Si:H and at the c-Si/SiO2 interface

Microscopic Identification of Electronic Defects in Semiconductors, MRS Proceedings Vol. 46

1985

Absence of oxygen diffusion during hydrogen passivation of shallow-acceptor impurities in single-crystal silicon

Applied Physics Letters

1985

Energy placement of the D- dangling-bond transition in a-Si:H from photocapacitance and photocurrent spectroscopies

Journal of Non-Crystalline Solids

1985

Electronic defects in transient, thermally processed semiconductors

Energy Beam-Solid Interactions and Transient Thermal Processing/1984, MRS Symposium Proceedings Vol. 35

1985

Electric-field dependence of hydrogen neutralization of shallow-acceptor impurities in single-crystal silicon

Applied Physics Letters

1985

Deep-level transient spectroscopy: from characterization to electronic defect identification

Proceedings of the SPIE Conference on Spectroscopic Characterization Techniques for Semiconductor Technology II

1985

Photodepopulation-induced ESR measurement of deep gap states in a-Si:H

Proceedings of AIP Conference on Optical Effects in Amorphous Semiconductors

August 1984

Electronic traps and Pb centers at the Si/SiO2 interface: band-gap energy distribution

Journal of Applied Physics

1984

Electronic defects in silicon after transient isothermal annealing

Energy Beam-Solid Interactions and Transient Thermal Processing, MRS Symposium Proceedings, vol. 23

1984

Highly photosensitive transistors in single-crystal silicon thin films on fused silica

Applied Physics Letters

1984

Energy beam-solid interactions and transient thermal processing

Materials Research Society Symposium Proceedings, vol. 23

1984

Electronic defects in CW transient thermal processed silicon

Semiconductors and Semimetals, Vol. 17

1984

Electronic deep levels in laser-crystallized silicon thin-film MOS capacitors on fused silica

Materials Research Society Symposia Proceedings vol. 33

1984

Capture and tunnel emission of electrons by deep levels in ultrathin nitrided oxides on silicon

Applied Physics Letters

1984

Devices and circuits in laser-crystallized silicon thin films on fused silica

Proceedings - The Electrochemical Society

1984

High-gain photodetectors in thin-film transistors fabricated from laser-crystallized silicon on fused silica

Technical Digest - International Electron Devices Meeting

1984

NMOS dynamic shift registers in CO2 laser-crystallized silicon thin-films on fused quartz

Materials Research Society Symposium Proceedings vol. 33

1984

NMOS logic circuits in laser-crystallized silicon on quartz

Energy Beam-Solid Interactions and Transient Thermal Processing, MRS Symposium Proceedings vol. 23

1984

Analysis of implanted boron profiles across the Si-SiO2 interface by secondary ion mass spectrometry

Thin Films and Interfaces II, Materials Research Society Symposium Proceedings, vol. 25

1984

Defect reduction by tilted zone crystallization of patterned silicon films on fused silica

Energy Beam-Solid Interactions and Transient Thermal Processing, Materials Research Society Symposium Proceedings, vol. 23

1984

Charge transient and optical absorption measurements of characteristic gap states in phosphorus doped a-Si:H

Journal of Non-Crystalline Solids

1984

Correlated paramagnetic defects and electronic deep levels at the oxidized silicon surface

Proceedings of the International Conference on Insulating Films on Semiconductors

1983

Electron-beam-induced-current measurements in silicon-on-insulator films prepared by zone-melting recrystallization

Applied Physics Letters

1983

Thin film transistors in CO2-laser crystallized silicon films on fused silica

Proceedings of the Materials Research Society Symposium on Laser-Solid Interactions and Transient Thermal Processing of Materials

1983

Measurement of deep levels in hydrogenated amorphous silicon by transient voltage spectroscopy

Applied Physics Letters

1983

Characteristic electronic defects at the Si-SiO2 interface

Applied Physics Letters

1983

High-performance thin-film transistors in CO2 laser crystallized silicon on quartz

Proceedings of SPIE

1983

Laser-induced crystallization of silicon on bulk amorphous substrates: an overview

Proceedings of the MRS Symposium on Laser-Solid Interactions and Transient Thermal Processing of Materials

1983

Deep-level distributions in hydrogenated amorphous silicon

Journal of Non-Crystalline Solids

1983

Detection of electronic defects in strip-heater crystallized silicon thin films

Proceedings of the Materials Research Society Symposium on Laser-Solid Interactions and Transient Thermal Processing of Materials

1983

Density of gap states of silicon grain boundaries determined by optical absorption

Applied Physics Letters

1983

Single-crystal silicon transistors in laser-crystallized thin films on bulk glass

IEEE Electron Device Letters

1982

Grain boundaries in crystallized silicon thin films

Grain Boundaries in Semiconductors

1982

Dual-gate a-Si:H thin film transistors

IEEE Electron Device Letters

1982

Thin-film transistors on a-Si:H

IEEE Transactions on Electron Devices

1982

Microstrain in laser-crystallized silicon islands on fused silica

Applied Physics Letters

1982

Measurement of semiconductor-insulator interface states by constant-capacitance deep-level transient spectroscopy (summary)

Journal of Vacuum Science and Technology

1982

Correlated electrical and microstructural studies of recrystallized silicon thin films on bulk glass substrates

Laser and Electron-Beam Interactions with Solids

1982

Deep levels in cw laser-crystallized silicon thin films

Applied Physics Letters

1982

Deuterium passivation of grain-boundary dangling bonds in silicon thin films

Applied Physics Letters

1982

Electronic defects in beam-crystallized silicon

Laser and Electron-Beam Interactions with Solids

1982

Measurement of semiconductor-insulator interface states by constant-capacitance, deep-level transient spectroscopy

Journal of Vacuum Science and Technology

1982

Silicide formation in Pd-a-Si:H Schottky barriers

Applied Physics Letters

1981

Measurement and analysis of current transients in well-characterized a-Si:H

Journal de Physique

1981

Field-effect transistors in a-Si:H

IEEE Transactions on Electron Devices

1981

Raman spectroscopic evaluation of silicides formed with a scanned electron beam

Laser and Electron-Beam Solid Interactions and Materials Processing

1981

Properties of patterned and CW laser-crystallized silicon films on amorphous substrates

Insulating Films on Semiconductors

1981

Processing and properties of CW laser-recrystallized silicon films on amorphous substrates

Laser and Electron-Beam Solid Interactions and Materials Processing

1981

Deuterium at the Si-SiO2 interface detected by secondary ion mass spectrometry

Applied Physics Letters

1981

Laser-induced crystallization of silicon islands on amorphous substrates: multilayer structures

Applied Physics Letters

1981

Laser induced crystal growth of silicon islands on amorphous substrates

Laser and Electron-Beam Solid Interactions and Materials Processing

1981

Electronic defects in metalorganic GaAlAs

Defects in Semiconductors

1981

Low-temperature annealing and hydrogenation of defects at the Si-SiO2 interface

Journal of Vacuum Science and Technology

1981

Hydrogenation of defects at the Si-SiO2 interface

Insulating Films on Semiconductors

1981

Grain boundaries in p-n junction diodes fabricated in laser-recrystallized silicon thin films

Applied Physics Letters

1981

Electronic defect levels in plasma-deposited amorphous silicon

Tetrahedrally Bonded Amorphous Semiconductors, AIP Conference Proceedings, vol. 73

1981

Scanning CW-laser-induced crystallization of silicon on amorphous substrates

Laser and Electron Beam Processing of Materials

1980

Surface-potential dependence of EPR centers at the Si/SiO2 interface

The Physics of MOS Insulators

1980

Defect luminescence in CW laser-annealed silicon

Laser and Electron Beam Processing of Materials

1980

Physical properties of ion-implanted SEM-annealed silicon

Laser and Electron Beam Processing of Materials

1980

Properties of silicon p-n junction diodes processed with a scanned electron beam

IEEE Transactions on Electron Devices

1980

Deep levels in scanned electron-beam annealed silicon

Applied Physics Letters

1980

A comparison of ion-implantation-induced deep levels in scanned electron-beam-annealed and CW laser-annealed silicon

Laser and Electron Beam Processing of Materials

1980

Characteristic defects at the Si-SiO2 interface

The Physics of MOS Insulators

1980

Defect luminescence in CW laser-annealed silicon

Journal of Applied Physics

1979

Scanning electron beam annealing with a modified SEM

Journal of Vacuum Science and Technology

1979

High-resolution scanning electron-beam annealing of ion-implanted silicon

Applied Physics Letters

1979

Measurement of interface defect states at oxidized silicon surfaces by constant-capacitance DLTS

Journal of Vacuum Science and Technology

1979

Energy-resolved DLTS measurement of interface states in MOS devices

IEEE Transactions on Electron Devices

1979

Energy-resolved DLTS measurement of interface states in MIS structures

Applied Physics Letters

1979

Electronic defect levels in self-implanted CW laser-annealed silicon

Applied Physics Letters

1979

Studies of the effect of oxidation time and temperature on the Si-SiO2 interface using Auger sputter profiling

Journal of Applied Physics

1979

Constant-capacitance DLTS measurement of defect-density profiles in semiconductors

Journal of Applied Physics

1979

Deep levels in ion-implanted, CW laser-annealed silicon

Laser-Solid Interactions and Laser Processing-1978, AIP Conference Proceedings 50

1979

Evidence for multiphonon emission from interface states in MOS structures

Solid State Communications

1978

Transient capacitance measurements of electronic states at the SiO2-Si interface

The Physics of SiO2 and Its Interfaces

1978

Electronic properties of a characteristic discrete level at the Si-SiO2 interface

IEEE Transactions on Electron Devices

1978

New studies of the Si-SiO2 interface using Auger sputter profiling

Solid State Communications

1978

Thermal aging of Al thin films on GaAs

Journal of Vacuum Science and Technology

July 1976

Compact calorimeter for measuring laser absorption coefficients of small samples

Review of Scientific Instruments

March 1976

The effect of illumination on the 10.6 micron absorption coefficient of electron-irradiated single crystal KCl

Physica Status Solidi (A)

The influence of high-energy electron irradiation on the 10.6 micron absorption of mixed KCl crystals

Physica Status Solidi (A)

Electron trapping in aluminum-implanted silicon dioxide films on silicon

Journal of Applied Physics

Position expectation values for an electron in an infinite tilted well

American Journal of Physics

April 1970

Comments on ‘Agreement between classical and quantum mechanical solutions for a linear potential inside a one-dimensional infinite potential well

American Journal of Physics

December 1969