On-the-flow pathogen characterization based on native fluorescence detection

Advances in Biodefense Technology

7 May 2008

Optical absorption by electronic defects at the Si-SiO2 interface

Journal of Electronic Materials

1985

Optical and electrical studies of interface traps in the Si/SiO2 system by modified junction space charge techniques

Physical Review B

15 March 1989

Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

Applied Physics Letters

25 October 2010

Optical polarization of UV-A and UV-B (In)(Al)GaN multiple quantum well light emitting diodes

Gallium Nitride Materials & Devices VI at SPIE Photonics West 2011

22 January 2011

Optical spectroscopy of the trivalent silicon defect at the Si-SiO2 interface

Physical Review B

1985

Optically pumped UV lasers grown on bulk AlN substrates

physica status solidi c

February 2012

Optically-heated zone crystal growth of silicon thin films on amorphous substrates

Silicon-on-Insulator: Its Technology and Applications

1985

Optically-pumped lasing of semipolar InGaN/GaN(1122) heterostructures

physica status solidi (c)

July 2010

Origin of the anomalous pulse-width dependence in capacitance transient measurements on n-type a-Si:H

Journal of Non-Crystalline Solids

2 May 1996

p-type and n-type doping of ZnSe: effects of hydrogen incorporation

Journal of Crystal Growth

1995

Palo Alto Research Center (PARC) and Crystal IS demonstrate the first UV-LED on AlN substrates

Compound Semiconductor & III/V Review

4 April 2002

Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates

Applied Physics Letters

25 September 2000

Performance and optical gain characteristic of InGaN multiple quantum well laser diodes.

International Conference on Luminescense and Optical Gain Spectroscopy (ICL)

23 August 1999

Performance characteristics of cw InGaN multiple-quantum-well laser diodes

Materials Research Society Fall Meeting

1 April 2001

Phase separation in InGaN/GaN multiple quantum wells

Applied Physics Letters

6 April 1998

Phase separation in InGaN/GaN multiple quantum wells

Materials Research Society Symposium

1 December 1997

Photoconduction in thin-film transistors fabricated from laser-crystallized silicon on fused quartz

Semiconductor-on-Insulator and Thin-film Transistor Technology, MRS Proceedings Vol. 53

1986

Photodepopulation-induced ESR measurement of deep gap states in a-Si:H

Proceedings of AIP Conference on Optical Effects in Amorphous Semiconductors

August 1984

Photoemission capacitance transient spectroscopy on n-type GaN

Applied Physics Letters

13 March 1995

Physical properties of ion-implanted SEM-annealed silicon

Laser and Electron Beam Processing of Materials

1980

Picosecond optical determination of carrier lifetime in polysilicon films

Polysilicon Films and Interfaces, MRS Symposium Proceedings, vol. 106

1988

Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates

Applied Physics Letters

2 January 2000

Pressure dependence of the Pb center at the <111> Si/SiO2 interface

Physical Review B

1989

Pressure dependence of the Pb center measured by voltage transient spectroscopy

Semiconductor Science and Technology

December 1989

Processing and properties of CW laser-recrystallized silicon films on amorphous substrates

Laser and Electron-Beam Solid Interactions and Materials Processing

1981

Progress in the preparation of aluminum nitride substrates from bulk crystals

MRS Spring Meeting 2002 Symposium Proceedings

1 April 2002

Properties of patterned and CW laser-crystallized silicon films on amorphous substrates

Insulating Films on Semiconductors

1981

Properties of silicon p-n junction diodes processed with a scanned electron beam

IEEE Transactions on Electron Devices

1980

Pseudomorphically grown ultraviolet C photopumped lasers on bulk AlN substrates

Applied Physics Express

10 August 2011

Quantitative analysis of absorption and field-induced absorption changes in InGaN/GaN quantum wells

Physica Status Solidi B

1 December 2002

Quantitative analysis of the polarization fields and absorption changes in InGan/GaN quantum wells with electroabsorption spectroscopy

Applied Physics Letters

1 April 2002

Raman spectroscopic evaluation of silicides formed with a scanned electron beam

Laser and Electron-Beam Solid Interactions and Materials Processing

1981

Raman studies of structural defects in vitreous SiO2 and GeO2

The Physics of SiO2 and Its Interfaces

1978

Re-evaluation of electric-field enhanced emission measurements for use in type and charge state determination of point defects

Proceedings of the 16th International Conference on Defects in Semiconductors

1992

Reply to Comment on "Inverted Order of Acceptor and Donor Levels of Monatomic Hydrogen in Silicon"

Physical Review Letters

29 May 1995

Reply to comments on interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon

Physical Review Letters

1987

Resolving pm wavelength shifts in optical sensing

Applied Physics B

1 March 2007

Revised role for the Poole-Frenkel effect in deep level characterization

Journal of Applied Physics

15 July 1988

Room-temperature continous-wave operation of InGaN multiple quantum well laser diodes with an asymmetric waveguide structure

Applied Physics Letters

26 July 1999

Room-temperature continuous-wave operation of InGaN multiple quantum well laser diodes with an asymmetric waveguide structure

Third International Conference on Nitride Semiconductors

5 July 1999

Scanning CW-laser-induced crystallization of silicon on amorphous substrates

Laser and Electron Beam Processing of Materials

1980

Scanning electron beam annealing with a modified SEM

Journal of Vacuum Science and Technology

1979

Selective hydrogen passivation of oxygen-related thermal-donor clusters in silicon

Materials Science Forum

1986

Self-limiting oxidation for fabricating sub-5 nm silicon nanowires

Applied Physics Letters

14 March 1994

Self-limiting oxidation of Si nano-wires

Journal of Vacuum Science and Technology B

November/December 1993

Semi-polar nitride surfaces and heterostructures

physica status solidi (b)

March 2011

SENSOR project overview video

17 April 2013

Shock-induced band gap shift in GaN: anisotropy of the deformation potentials

Physical Review B

15 March 2005

Silicide formation in Pd-a-Si:H Schottky barriers

Applied Physics Letters

1981

Silicon quantum wires -- oxidation and transport studies

Microcrystalline Semiconductors -- Materials Science and Devices, Materials Research Society Symposium Proceedings

1993

Silver-clad nitride semiconductor laser diode

Applied Physics Letters

26 January 2009

Single-crystal silicon transistors in laser-crystallized thin films on bulk glass

IEEE Electron Device Letters

1982

Small-signal admittance of forward-biased a-Si:H p-i-n diodes by time domain analysis

Amorphous and Microcrystalline Silicon Technology

14 April 1998

Smart Trigger for Class Identification of Biomolecules and Chemicals

EUWP review meeting

22 June 2005

Smart trigger subsystem for class identification of biomolecules and chemicals

ONR/EUWP project review

28 June 2006

Smart trigger subsystem for class identification of biomolecules and chemicals

ONR EUWP project review

19 September 2007

Solid-source doping of a-Si:H thin films deposited with a remote hydrogen plasma

Journal of Non-Crystalline Solids

1989

Solid-source doping of hydrogenated amorphous silicon

Philosophical Magazine Letters

1989

Spatial profiling of electron traps in silicon nitride thin films

Journal of Applied Physics

15 November 1990

Spatially modulated emission advances point-of-care diagnostics

Laser Focus World

November 2010

Spatially modulated emission for point-of-care flow cytometer

MRS Fall Meeting 2008

1 December 2008

Spatially modulated fluorescence emission from moving particles

Applied Physics Letters

26 January 2009

Spectroscopy of hydrogen-related complexes in GaP:Zn

Applied Physics Letters

24 October 1994

Spiral-shaped microcavity laser: a new class of semiconductor laser

Proceedings of the 27th International Conference on the Physics of Semiconductors

26 July 2004

Stability of a-Si:H deposited at high temperatures and hydrogen dilution in a remote hydrogen plasma reactor

Journal of Non-Crystalline Solids

1991

Stability of a-Si:H thin films deposited at high temperatures with a remote hydrogen plasma

Applied Physics Letters

16 September 1991

The state of semiconductor light sources - blue laser diodes and beyond

COMDEX 2002

22 November 2002

Stripe-width dependence of threshold current for gain-guided AIGaInN laser diodes

Applied Physics Letters

18 January 1999

Structural characterization of high quality GaN films grown by hydride vapor phase epitaxy

Materials Research Society Spring Meeting

8 April 1996

Structural characterization of thick (1122) GaN layers grown by HVPE on m-plane sapphire

physica status solidi (a)

June 2010

Structure of the boron-hydrogen complex in crystalline silicon

Physical Review B

1987

Studies of hole transport in Mg-doped AlGaN layers for deep-ultraviolet light emitters

SPIE Photonics West

7 February 2013

Studies of the effect of oxidation time and temperature on the Si-SiO2 interface using Auger sputter profiling

Journal of Applied Physics

1979

Surface-potential dependence of EPR centers at the Si/SiO2 interface

The Physics of MOS Insulators

1980

The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface

Journal of Applied Physics

1987

The structure of the boron-hydrogen complex in silicon

Defects in Electronic Materials, MRS Proceedings Series, vol. 104

1988

Thermal dissociation energy of the Si-H complex in n-type GaAs

Applied Physics Letters

22 July 1991

Thermodynamic equilibration kinetics of phosphorus and boron doped a-Si:H

Journal of Non-Crystalline Solids

1993

Thickness dependence of electronic properties of GaN epi-layers

1996 Fall Meeting of the Materials Research Society

2 December 1996

Thin film transistors in CO2-laser crystallized silicon films on fused silica

Proceedings of the Materials Research Society Symposium on Laser-Solid Interactions and Transient Thermal Processing of Materials

1983

Thin-film transistor technology for large-area integrated circuits

IEEE ElectroTechnology Review

1986

Thin-film transistors on a-Si:H

IEEE Transactions on Electron Devices

1982

Time encoded multicolor fluorescence detection in a microfluidic flow cytometer

Lab on a Chip

2012

Transient capacitance measurements of electronic states at the SiO2-Si interface

The Physics of SiO2 and Its Interfaces

1978

Transient capacitance measurements of hole emission from interface states in MOS structures

Applied Physics Letters

1977

Trapping time in processed polycrystalline silicon measured by picosecond time-resolved reflectivity

Journal of Applied Physics

1988

Tunable electroabsorption and electro-luminescence in GaAs doping superlattices

Superlattices and Micro-structures

1987

Tunable electroabsorption and electroluminescence in GaAs doping superlattices

Applied Physics Letters

1987

Tunable electroabsorption and electroluminescence in GaAs doping superlattices

Proceedings of the SPIE Conference on Quantum Well and Superlattice Physics

1987

Two-section InGaN multiple-quantum-well laser diode with integrated electro-absorption modulator

Applied Physics Letters

1 May 2002

Ubiquitous blue light: The integration of InGaN-based optoelectronics with dissimilar substrates by wafer bonding and laser lift-off

27th International Symposium on Compound Semiconductors

2 October 2000

Ultraviolet AlGaN multiple quantum well laser diodes

Applied Physics Letters

23 June 2003

Ultraviolet InAlGaN light emitting diodes grown on hydride vapor phase epitaxy AlGaN/sapphire templates

Japanese Journal of Applied Physics

1 May 2006

Ultraviolet InAlGaN multiple quantum well laser diodes

Physica Status Solidi

7 October 2003

Ultraviolet InGaN, AlGaN and InAlGaN multiple-quantum-well laser diodes

Novel In-Plane Semiconductor Lasers III; Photonics West 2004

24 January 2004

Ultraviolet laser diodes on sapphire and AlN substrates

Photonics West 2009

26 January 2009

Uni-directional lasing from InGaN multiple-quantum-well spiral-shaped micropillars

Applied Physics Letters

1 September 2003

Vertical injection thin-film AlGaN/AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes

Applied Physics Letters

11 December 2006

Vibrational spectroscopy of GaN:Mg under pressure

Fall Meeting of the Materials Research Society

26 November 2001

Comments on ‘Agreement between classical and quantum mechanical solutions for a linear potential inside a one-dimensional infinite potential well

American Journal of Physics

December 1969

Compact calorimeter for measuring laser absorption coefficients of small samples

Review of Scientific Instruments

March 1976

The effect of illumination on the 10.6 micron absorption coefficient of electron-irradiated single crystal KCl

Physica Status Solidi (A)

Electron trapping in aluminum-implanted silicon dioxide films on silicon

Journal of Applied Physics

The influence of high-energy electron irradiation on the 10.6 micron absorption of mixed KCl crystals

Physica Status Solidi (A)

Position expectation values for an electron in an infinite tilted well

American Journal of Physics

April 1970

Thermal aging of Al thin films on GaAs

Journal of Vacuum Science and Technology

July 1976