Electronic properties of a characteristic discrete level at the Si-SiO2 interface

IEEE Transactions on Electron Devices

1978

Transient capacitance measurements of electronic states at the SiO2-Si interface

The Physics of SiO2 and Its Interfaces

1978

Evidence for multiphonon emission from interface states in MOS structures

Solid State Communications

1978

Transient capacitance measurements of hole emission from interface states in MOS structures

Applied Physics Letters

1977

SENSOR project overview video

17 April 2013

Thermal aging of Al thin films on GaAs

Journal of Vacuum Science and Technology

July 1976

Compact calorimeter for measuring laser absorption coefficients of small samples

Review of Scientific Instruments

March 1976

The effect of illumination on the 10.6 micron absorption coefficient of electron-irradiated single crystal KCl

Physica Status Solidi (A)

The influence of high-energy electron irradiation on the 10.6 micron absorption of mixed KCl crystals

Physica Status Solidi (A)

Electron trapping in aluminum-implanted silicon dioxide films on silicon

Journal of Applied Physics

Position expectation values for an electron in an infinite tilted well

American Journal of Physics

April 1970

Comments on ‘Agreement between classical and quantum mechanical solutions for a linear potential inside a one-dimensional infinite potential well

American Journal of Physics

December 1969