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DARPA kicks off green laser project
Non-polar GaN substrates and low-defect crystal growth will have an important part to play in powerful, practical green laser diodes.
Andy Extance, Optics.org, January 10, 2008
Excerpts from the article:
Nine research groups have begun tackling the challenge of producing a high-power 500 nm semiconductor laser in a three-year US-based research program called VIGIL.
The teams met to initiate the program at the end of November, and they have until June 2009 to hit the first milestone and produce a workable green laser based on GaN.
VIGIL stands for Visible InGaN Injection Lasers, a name that reflects the need to include high proportions of indium to obtain green light from GaN-based laser diodes.
"There's a technical problem with getting green [light] out of nitride material," explained Henrik Temkyn, VIGIL's program manager at the US Defence Advanced Research Projects Agency (DARPA). "If you increase the amount of indium, the efficiency goes down."
...The other groups funded under VIGIL come from the University of South Carolina, TDI Incorporated, the Rensselaer Polytechnic Institute, the Palo Alto Research Center, Kansas State University, Arizona State University, and the High Pressure Research Center of the Polish Academy of Sciences.
Expertise in MOCVD fabrication of laser diodes is an attribute that is common to most of these groups...
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