home › event - front side metallization of crystalline silicon solar cells using selectively laser drilled contact openings

EVENT:

Front side metallization of crystalline silicon solar cells using selectively laser drilled contact openings
Conferences & Talks

2009 IEEE Photovoltaic Specialists Conference

7 June 2009

 

description

Selective removal of the silicon nitride dielectric layer has been demonstrated even using nanosecond range laser pulses, through carefully controlling the energy density of laser pulses. It has been found that, a laser pulse with a peak energy density of 4.3 J/cm2 or lower can remove the nitride layer without altering the underlying silicon while a pulse with a peak energy density of 4.8 J/cm2 or higher will substantially damage the silicon. With the laser energy density maintained below the threshold for silicon ablation, multiple laser pulses can be used to more completely remove the nitride layer. Also, using high quality blanket sputtered nickel film as metal contact layer and screen printed silver gridlines as an etching protection mask, a new method for front side metallization has been developed. The specific contact resistance can be reduced by about two orders of magnitude compared to the conventional screen printed and fired through silver contact, and the firing temperature can be lowered to about 500°C.

 

upcoming events   view all 

Joshua Wolf Shenk: The Power of Two
6 October 2014
Conferences & Talks  

Leadership and Tactics for Creating Digital Disruption
John Rossman
16 October 2014 | George E. Pake Auditorium, PARC
PARC Forum  

Automated Data Integration
Eric Huang, Author, Saigopal Nelaturi
27 October 2014
Conferences & Talks  

Global Competitiveness: The Role of Innovation and Productivity
Stephen Hoover, CEO, PARC
27 October 2014 | Toronto, Canada
Conferences & Talks  

The Internet of Everything
Stephen Hoover, CEO, PARC
28 October 2014 | Toronto, Canada
Conferences & Talks