home › event - atomic layer deposition of al2o3 for top-gated organic transistors

EVENT:

Atomic layer deposition of Al2O3 for top-gated organic transistors
Conferences & Talks

2011 Materials Research Society (MRS) Spring Meeting

27 April 2011

 

description

Atomic layer deposition (ALD) of thin film high-k oxides has been demonstrated for low voltage thin film transistors (TFT). However, for organic semiconductors, the transistors are based on a bottom-gate architecture. We have developed an oxide growth process for a top-gate transistor architecture for organic thin film semiconductors based on the ALD process, plasma-enhanced as well as thermal. The ALD growth process is self-limiting and this implies that the film thickness is dependent only on the number of deposition cycles. Practically, this creates accurate and uniform conformal thickness control over large areas. Furthermore, thickness control leads to good reproducibility and straightforward scale-up. We will discuss our low temperature (150C) Al2O3 growth process by plasma assisted-ALD compared to the thermal process. Also, oxide characterization as well as top-gated TFT performance will be presented.

 

upcoming events   view all 

The Future of the Internet: Meaning and Names or Numbers?
Glenn Edens
13 February 2015 | San Jose, CA
Conferences & Talks  

CTO Forum
Jatinder Singh
13 February 2015 | East Palo Alto, CA
Conferences & Talks  

Privacy in an Era of Big Data: Directions, Advances, and Reflections
Ersin Uzun
15 February 2015 | San Jose, CA
Conferences & Talks