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Effects of Mechanical Strain on A-Si:H TFT Electrical Stability
Conferences & Talks
14 June 2013
The electrical stability of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) on flexible substrates is characterized under uniaxial tension and compression applied by bending. TFTs under compression(tension) experience enhanced(reduced) degradation under moderate constant-voltage gate bias (<2MV/cm) compared to without applied strain, with ~5% more(less) reduction in IDS after 104s. After removal of bias stress, TFTs released similar percentages of trapped charge over time regardless of applied strain conditions. The stretched-hyperbola model for defect creation in a-Si:H TFTs was fitted to measurement data and used to predict how applied strain can affect TFT lifetime in practical applications.
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