home › event - effects of mechanical strain on a-si:h tft electrical stability


Effects of Mechanical Strain on A-Si:H TFT Electrical Stability
Conferences & Talks

Applied Physics Letters

14 June 2013



The electrical stability of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) on flexible substrates is characterized under uniaxial tension and compression applied by bending. TFTs under compression(tension) experience enhanced(reduced) degradation under moderate constant-voltage gate bias (<2MV/cm) compared to without applied strain, with ~5% more(less) reduction in IDS after 104s. After removal of bias stress, TFTs released similar percentages of trapped charge over time regardless of applied strain conditions. The stretched-hyperbola model for defect creation in a-Si:H TFTs was fitted to measurement data and used to predict how applied strain can affect TFT lifetime in practical applications.


upcoming events   view all 

What is the Future of Cybersecurity?
Alissa Johnson
26 September 2017 | George E. Pake Auditorium, PARC
PARC Forum  

Bringing Reliable (and Transparent) AI to Business (Keynote)
Tolga Kurtoglu, Keynote Presenter
28 September 2017 | Santa Clara, CA
Conferences & Talks  

AI’s Impact on Industry (Keynote Power Panel)
Tolga Kurtoglu, Moderator
28 September 2017 | Santa Clara, CA
Conferences & Talks