home › event - sol-gel solution-deposited ingazno thin film transistors

EVENT:

Sol-gel solution-deposited InGaZnO thin film transistors
Conferences & Talks

Applied Materials and Interfaces (American Chemical Society)

13 January 2014

 

description

Thin film transistors fabricated by solution processing of sol-gel oxide semiconductor precursors in the group In-Ga-Zn are described. The TFT mobility varies over a wide range depending on the precursor materials, the composition and the processing variables, with the highest mobility about 30 cm2/Vs for IZO and 20 cm2/Vs for IGZO. The positive dark bias stress effect decreases markedly as the mobility increases and the high mobility devices are quite stable. The negative bias illumination stress effect is also weaker in the higher mobility TFTs and some different characteristic properties are observed. The TFT mobility, threshold voltage and bias stress properties are discussed in terms of the formation of self-compensated donor and acceptor states, based on the chemistry and thermodynamics of the sol-gel process.
 

upcoming events   view all 

Digitization and the Internet of Things: The Convergence of Technology and Business Models
Markus Larsson
25 September 2016 - 27 September 2016 | Göteborg, Sweden
Conferences & Talks  

Human-Centered Designed Robots are All Around Us
Leila Takayama
29 September 2016
PARC Forum  

Stanford and PARC host Digital Cities Summit 2016
Victoria Bellotti, Panel Facilitator, Bernard Casse, Panelist, Sean Garner, Panelist, Stephen Hoover, Keynote Speaker, Matthew Klenk, Tolga Kurtoglu, Panel Facilitator, Markus Larsson, Speaker, Ersin Uzun, Panelist
3 October 2016 - 4 October 2016 | Stanford, CA
Conferences & Talks  

2016 Annual Conference of the Prognostics and Health Management Society
Parham Shahidi, Panelist, Rui Maranhão, Keynote Speaker
5 October 2016 - 6 October 2016 | Denver, CO
Conferences & Talks