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EVENT:

Indium incorporation c-plane and m-plane InGaN surfaces
Conferences & Talks

International Workshop on Nitride Semiconductors (IWN 2008)

6 October 2008 - 10 October 2008
Montreux, Switzerland

 

description

We present first-principles calculations for m-plane and c-plane In0.25Ga0.75N surfaces, focusing on how the growth conditions affect indium incorporation.