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EVENT:

Metal-clad Nitride Semiconductor Laser Diodes
Conferences & Talks

8th International Conference on Nitride Semiconductors

22 October 2009
Jeju Island, Korea

 

description

We demonstrate nitride laser diode structures that employ evaporated Ag, sputtered Ag-Pd-Cu alloy, or sputtered ITO as waveguide cladding layers.  The non-epitaxial films replace conventional p-AlGaN epitaxial upper-cladding layers used in typical InGaN laser diodes.