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Quantitative analysis of absorption and field-induced absorption changes in InGaN/GaN quantum wells

 
 
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Kiesel, P. ; Renner, F.; Kneissl, M. A. ; Van de Walle, C. G. ; Doehler, G.; Johnson, N. M. Quantitative analysis of absorption and field-induced absorption changes in InGaN/GaN quantum wells. Physica Status Solidi B. 2002 December; 234 (3): 742-745.