home › resources & publications › magnesium incorporation in gan grown by molecular beam epitaxy
TECHNICAL PUBLICATIONS:
Magnesium incorporation in GaN grown by molecular beam epitaxy
- Applied Physics Letters
citation
Ptak, A. J.; Myers, T. H.; Romano, L. T. ; Van de Walle, C. G. ; Northrup, J. E. Magnesium incorporation in GaN grown by molecular beam epitaxy. Applied Physics Letters. 2001 January 15; 78 (3): 285-287.
PARC author
related publications
Influence of microstructure on the carrier concentration in Mg-doped GaN films
Advances in blue laser diode development for high resolution printing
CW operation of InGaN MQW laser diodes
Design and performance of asymmetric waveguide nitride laser diodes
Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures
