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Ubiquitous blue light: The integration of InGaN-based optoelectronics with dissimilar substrates by wafer bonding and laser lift-off

 

InGaN-based optoelectronics have been integrated with dissimilar substrate materials using a novel thin-film laser lift-off (LLO) process. Separation of InGaN-based thin-film devices from their typical sapphire growth substrates is accomplished using a pulsed-excimer laser in the ultraviolet regime incident through the transparent substrate. By employing the LLO process with wafer-bonding techniques, InGaN-based light emitting diodes (LEDs) have been integrated with Si substrates, forming vertically-structured LEDs. The LLO process has also been employed to integrate InGaN-based laser diodes (LDs) with Cu substrates. Characterization of the LEDs and LDs before and after the sapphire substrate removal revealed no measurable degradation in device performance.

 
citation

Wong, W. S.; Kneissl, M. A.; Mei, P.; Treat, D. W.; Schmidt, T. J.; Teepe, M. R.; Johnson, N. M. Ubiquitous blue light: The integration of InGaN-based optoelectronics with dissimilar substrates by wafer bonding and laser lift-off. Proceedings of the 27th International Symposium on Compound Semiconductors; 2000 October 2; Monterey; CA. IEEE; 2000; 125-130.