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Gap states in organic semiconductors: hydrogen and oxygen induced states in pentacene

 

First-principles pseudopotential density functional calculations are reported for hydrogen and oxygen related defects in crystalline pentacene (C22H14). It is shown that defects that perturb a carbon atom so as to remove its pz-orbital from participation in the pi-system give rise to a state in the gap. One such defect is formed by adding a H atom to create a C22H15 molecule with one four-fold C atom. In the neutral charge state a single electron occupies a p-orbital having reduced amplitude on the perturbed carbon atom. Charged defects correspond to addition or removal of an electron from this orbital. The possibility that these defects give rise to the bias-stress effect in pentacene is discussed.

 
citation

Northrup, J. E. ; Chabinyc, M. Gap states in organic semiconductors: hydrogen and oxygen induced states in pentacene. Physical Review B. 2003 July 15; 68 (4): 41202-1-4.