Near-band-edge cathodoluminescence studies of AlN homoepitaxial films

• Applied Physics Letters

Cathodoluminescence experiments were performed on high quality AlN epitaxial films grown by metal organic chemical vapor deposition on large single crystal AlN substrates. Measurements carried out at different temperatures allowed the identification of the lines, which were attributed to free and bound exciton recombination processes.

citation

Silveira, E.; Freitas Jr., J. A.; Kneissl, M. A. ; Treat, D. W. ; Johnson, N. M. ; Slack, G.; Schowalter, L. Near-band-edge cathodoluminescence studies of AlN homoepitaxial films. Applied Physics Letters. 2004 May 3; 84 (18): 3501-03.