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Ultraviolet InGaN, AlGaN and InAlGaN multiple-quantum-well laser diodes

 

Design and performance characteristics of InGaN, AlGaN and InAlGaN multiple quantum well (MQW) laser diodes emitting in the ultraviolet spectral region are reported. The nitride laser diodes were grown on quasi-bulk GaN and c-plane sapphire substrates by metal organic chemical vapor deposition. By reducing the indium content in the InGaN MQW, we have realized laser diodes on GaN substrates emitting at wavelength as short as 366.9 nm with pulsed threshold current densities around 8kA/cm2. Improved performance characteristic with differential quantum efficiencies of 7.7% and light output powers of close to 400mW were obtained. We also demonstrate room-temperature pulsed operation of AlGaN and InAlGaN MQW laser diodes grown on sapphire substrates emitting at record short wavelength of 357.9nm. Light output powers greater than 80mW under pulsed current-injection conditions and differential quantum efficiencies of 4.2% have been achieved.

 
citation

Kneissl, M. A. ; Treat, D. W. ; Teepe, M. R. ; Miyashita, N. ; Johnson, N. M. ; Molnar, R. J. Ultraviolet InGaN, AlGaN and InAlGaN multiple-quantum-well laser diodes. Novel In-Plane Semiconductor Lasers III; 2004 January 26-29; San Jose; CA. Bellingham: SPIE; 2004; SPIE Proceedings vol. 5365: 278-281.