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All jet-printed polymer thin-film transistor active-matrix backplanes

 

This paper describes the fabrication of complete polymer TFT arrays using jet-printing as the only patterning technique. The method of array fabrication and the design of pixels to optimize the performance for the specifics of the printed features are discussed. The polymer semiconductor used here is composed of polythiophene nanoparticles dispersion in chlorobenzene. The organic semiconductor nanoparticles are generated from the regioregular polythiophene, poly[5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene)], (PQT-12). The enhanced environmental stability of the semiconductor nanoparticles allows all processing steps to be done in the ambient.Additive and subtractive printing processes combine to make 128x128 pixel active matrix arrays with 340 micron pixel size. The pixel design benefits from the registration accuracy of jet-printing and we show that the electrical performance is suitable for addressing capacitative media displays.

 
 
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citation

Arias, A. C.; Ready, S. E.; Lujan, R. A.; Wong, W. S.; Paul, K.; Salleo, A.; Chabinyc, M.; Apte, R. B.; Street, R. A.; Wu, Y.; Liu, P.; Ong, B. S. All jet-printed polymer thin-film transistor active-matrix backplanes. Applied Physics Letters. 2004 October 11; 85 (15): 3304.

copyright

Copyright © American Institute of Physics, 2004. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://link.aip.org/link/doi/10.1063/1.1801673.