Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film
In the present work we will report on the optical properties of an AlN film homoepitaxially grown on high quality large bulk AlN single crystals. The later were grown by a sublimation-recondensation technique, while the film were grown by organometallic vapor phase epitaxy. Cathodoluminescence measurements were performed using electron beam energies between 2 and 10 keV in order to excite the sample and so to probe different sample depths, making it possible to differentiate between different features originated in the AlN homoepitaxial film. The penetration depth has been determined through the calculation of the Bohr-Bethe maximum range of excitation using the approximation to the Everhart-Hoff expression for the energy loss within a solid.
Silveira, E.; Freitas Jr., J. A.; Slack, G.; Schowalter, L.; Kneissl, M. A. ; Treat, D. W. ; Johnson, N. M. Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film. Journal of Crystal Growth. 2005 July 15; 281 (1): 188-193.