Ultraviolet InAlGaN light emitting diodes grown on hydride vapor phase epitaxy AlGaN/sapphire templates

• Japanese Journal of Applied Physics

We demonstrate high-efficiency ultraviolet (UV) InAlGaN multiple-quantum-well light emitting diodes (LED) deposited by metal organic chemical vapor deposition (MOCVD) on hydride vapor phase epitaxy (HVPE) grown AlGaN/sapphire templates. The combination of HVPE and MOCVD allows separate optimization of the growth of high-quality AlGaN/sapphire templates and sophisticated LED heterostructures. High-performance UV LEDs emitting in the range between 373 nm and 289 nm have been realized. LED devices emitting near 330 nm exhibit cw light output power of more than 11 mW and an external quantum efficiency (EQE) of 1.5%. Under pulsed bias testing the peak light output is more than 55 mW with an EQE of 2.3%.

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citation

Kneissl, M. A. ; Yang, Z. H. ; Teepe, M. R. ; Knollenberg, C. ; Johnson, N. M. ; Usikov, A.; Dmitriev, V. Ultraviolet InAlGaN light emitting diodes grown on hydride vapor phase epitaxy AlGaN/sapphire templates. Japanese Journal of Applied Physics. 2006 May; 45 (5A): 3905-3908.