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Digital lithography for large-area electronics on flexible substrates

 

Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) were fabricated at growth temperatures no greater than 150°C. The transistor device performance was comparable to conventional high-temperature processed devices. Typical field-effect mobility for these low-temperature devices were ~ 1 cm2/V∙s, on-off ratios of > 108, and sub-threshold slopes of 0.5 V/decade were measured. The low-temperature process allowed the integration of the TFTs with flexible polymeric substrates. Device fabrication for these devices was performed using jet-printed etch masks in place of photolithography. The devices fabricated on the flexible substrates using jet printing were comparable to devices fabricated on glass.

 
citation

Wong, W. S. ; Lujan, R. A. ; Daniel, J. H. ; Limb, S. Digital lithography for large-area electronics on flexible substrates. Proceedings of the 21st International Conference on Amorphous and Nanocrystalline Semiconductors - Science and Technology; 2005 September 4-9; Lisbon; Portugal. In the Journal of Non-crystalline Solids; 2006 June 15; 352 (9-20): 1981-1985.