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Surface induced self-encapsulation of polymer thin film transistors

 

Thin film transistors (TFTs) exhibit self-encapsulation when fabricated from a blend solution of polythiophene semiconductor and a polymer insulator. The polythiophene solution preferentially wets the gate dielectric surface and a surface-directed, self-organized bilayer of two polymers phases occurs spontaneously. The vertical segregation is characterized by energy dispersive spectroscopy and scanning electron microscopy. An analysis of wetting contact angle measurements on different surfaces shows that the vertical segregation mechanism originates from the minimization of surface energy during drying. Self-encapsulation greatly enhances the environmental stability of the TFTs.

 
citation

Arias, A. C. ; Endicott, F .; Street, R. A. Surface induced self-encapsulation of polymer thin film transistors. Advanced Materials. 2006 November; 18 (21): 2900-2904.