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Influence of quantum well barriers on gain and threshold current in AlGaN lasers

 

In AlGaInN quantum-well lasers the presence of Al affects the optical properties of the gain-generating region partly because of the distinct differences in the band structure between GaN and InN on the one hand and between GaN and AlN on the other. The intricate connection between band structure and internal-electric-field effects leads to a stronger influence of barrier composition on optical gain, lasing polarization, and threshold current than is found in conventional near-infrared III-V lasers.

 
citation

Chow, W. W.; Kneissl, M. A. ; Northrup, J. E. ; Johnson, N. M. Influence of quantum well barriers on gain and threshold current in AlGaN lasers. Applied Physics Letters. 2007 March 5; 90 (10): 101116.