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Flexible a-Si:H-based image sensors fabricated by digital lithography

 

The scaling of large-area electronics will become increasingly complex with conventional methods of device processing, such as photolithography, reaching a practical limit. Novel processing methods using conventional electronic materials with flexible platforms will create new functionality at reduced costs for applications such as flexible a-Si:H image sensors. a-Si:H-based thin-film transistor (TFT) arrays were fabricated using jet-printed, digital lithographic processing in place of conventional photolithography. The print-patterned arrays were processed on polyethylene naphthalate substrates with a maximum process temperature of 150°C. The TFT device performance was comparable to devices fabricated at high temperatures on glass. A low-temperature p-i-n sensor layer was then integrated onto the flexible 75 dpi resolution, 180×180 pixel array. The sensor layer possessed a linear light response with a measured quantum efficiency of ~ 70% at 488 nm with a dark current of 10-8 Amps/cm2 at a reverse bias voltage of 2V. A comparison of the a-Si:H-based sensor arrays with a poly-fluorene-based sensor array, on a flexible a-Si:H TFT backplane will also be presented.

 
citation

Wong, W. S. ; Ng, T. ; Chabinyc, M. ; Lujan, R. A. ; Apte, R. B. ; Limb, S. ; Street, R. A. Flexible a-Si:H-based image sensors fabricated by digital lithography. 2007 MRS Spring Meeting; 2007 April 9-13; San Francisco; CA; U.S.A.