Bias stress effects in organic thin film transistors

• IEEE International Reliability Physics Symposium

Device instability and limited lifetime have been the hurdles to commercialization of organic electronics. Through electrical characterizations and microscopy techniques, much progress has been made in understanding gate bias stress that limits the stability of organic field-effect transistors. The kinetics and mechanisms of charge trapping in organic semiconductors are examined to explain the bias-stress behaviors. The external processing factors, such as dielectric treatments and environmental conditions that affect the severity of bias stress, are also investigated to enable controllable and reproducible device fabrication.

citation

Ng, T. ; Chabinyc, M. ; Street, R. A. ; Salleo, A. Bias stress effects in organic thin film transistors. IEEE International Reliability Physics Symposium; 2007 April 17-19; Phoenix; AZ; USA.