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The effects of the surface roughness of inorganic dielectrics on polymeric thin film transistors

 

The effects of the roughness of the gate dielectric on the performance of thin film transistors (TFTs) fabricated with poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT-C16, were examined. The field effect mobility of coplanar TFTs made with PBTTT-16 and plasma-enhanced chemical vapor deposited SiO2/SiNx dielectrics decreased nearly exponentially with surface roughness. The films of PBTTT-C16 have similar crystalline structure on smooth and rough surfaces, but the domain size decreased with increasing roughness. Surface roughness was found to have less of an impact on field effect mobility than the chemical treatment of the dielectric.

 
citation

Chabinyc, M. ; Lujan, R. A. ; Endicott, F .; McCulloch, I.; Heeney, M. The effects of the surface roughness of inorganic dielectrics on polymeric thin film transistors. Applied Physics Letters. 2007 June 4; 90 (23): 233508/1-3.