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Low temperature a-Si:H photodiodes and flexible image sensor arrays patterned by digital lithography

 

Hydrogenated amorphous silicon-based image sensor arrays were fabricated on polyethylene naphthalate substrates, with photodiodes optimized for process temperatures of 150C. Patterning of the thin-film transistor backplane was accomplished using ink-jet printed etch masks. A flexible image sensor is demonstrated with 75 dpi resolution over 180 x 180 pixels and with sensitivity of 1.2pW/cm^2.

 
citation

Ng, T. ; Lujan, R. A. ; Sambandan, S. ; Street, R. A. ; Limb, S. ; Wong, W. S. Low temperature a-Si:H photodiodes and flexible image sensor arrays patterned by digital lithography. Applied Physics Letters. 2007 August 6; 91 (6): 063505.