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Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition.

 
 
citation

Romano, L. T. ; Van De Walle, C. G. ; Ager III, J. W. ; Goetz, W .; Kern, R. S . Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition. Journal of Applied Physics. 2000 June 1; 87(11): 7745-7752.