Electrical stability of inkjet-patterned organic complementary inverters measured in ambient conditions
Complementary organic inverters comprising p- and n-type semiconductors and inorganic-organic bilayer dielectrics were fabricated by inkjet patterning of both the metal contacts and the semiconductors. Bottom-gate bottom-contact organic thin-film transistors with Ta gates, Ta2O5-polymer bilayer dielectrics, inkjet-printed Ag source-drain contacts, and inkjet-printed p-channel (pBTTT) and n-channel (perylene) semiconductors exhibit hole and electron mobilities as high as ~ 10-2 cm2/Vs. Complementary inverters based on these TFTs operate in ambient and exhibit a gain of -4.4 with VDD=+20V and -3dB cutoff at 100 kHz with a load of 0.02 pF. The electrical stability of the complementary inverters was evaluated for analog and digital operations, and a noise margin =1.1V at VDD=+15V was measured when including p- and n-channel TFT bias stress.
Ng, T. ; Sambandan, S. ; Lujan, R. A. ; Arias, A. C. ; Newman, C.; Yan, H.; Fachetti, A. Electrical stability of inkjet-patterned organic complementary inverters measured in ambient conditions. Applied Physics Letters. 2009 June 10; 94 (23): 233307.