Ultraviolet laser diodes on sapphire and AlN substrates

• Photonics West 2009

The performance characteristics of InAlGaN multiple quantum well (MQW) lasers grown on sapphire and low defect density bulk AlN substrates has been compared. The group III-nitride laser heterostructures were grown on (0001) AlN and c-plane sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Lasing was observed for optically pumped AlGaInN heterostructures in the wavelength range between 333 nm and 310 nm. A comparison of laser thresholds shows reduced threshold power densities for lasers grown on bulk AlN with threshold densities as low as 175 kW/cm2 for lasers emitting near 330 nm.

citation

Kneissl, M. A.; Yang, Z. H.; Teepe, M. R.; Johnson, N. M. Ultraviolet laser diodes on sapphire and AlN substrates. Novel In-Plane Semiconductor Lasers VII at Photonics West; 2009 January 26; San Jose, CA. Bellingham, WA: SPIE; 2009; 7230: 72300E.