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Chemically modified ink-jet printed silver electrodes for organic field-effect transistors

 

Modification of ink-jet printed silver source and drain electrodes for organic field-effect transistors (FETs) with the electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) was investigated.  Solution-based deposition of F4TCNQ onto ink-jet printed silver electrodes formed using either a nanoparticle-based or a metal organic decomposition ink, lead to a greater than tenfold improvement in FET mobility.  Using these modified electrodes with the organic semiconductor 6,13-bis(triisopropylsilylethynyl) pentacene yields devices with a charge carrier mobility up to 0.9 cm2 V-1 s-1 and a current on/off ratio of 106.

 
 
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citation

Whiting, G. L.; Arias, A. C. Chemically modified ink-jet printed silver electrodes for organic field-effect transistors. Applied Physics Letters. 2009 December 21; 95 (25): 253302.

copyright

Copyright © American Institute of Physics, 2009. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://link.aip.org/link/?APL/95/253302.