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Degradation mechanisms of organic ferroelectric field-effect transistors used as non-volatile memory

 

Organic ferroelectric field-effect transistors were fabricated for use as non-volatile memory that retained 50% of current hysteresis over seven days. Hysteresis degradation was shown to originate from reductions in semiconductor mobility, dielectric capacitance, and shifts in transistor threshold voltages. The mobility decrease and the threshold-voltage shift were caused by dipolar alignment in the ferroelectric insulator, and the rate of change in gate capacitance is explained by the depolarization field in the ferroelectric dielectric. A method to calibrate and extract the input switching voltage is presented, and this calibration accounts for polarization loss with time and allows the ferroelectric transistors to be used as analog memories.

 
 
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citation

Ng, T.; Russo, B.; Arias, A. C. Degradation mechanisms of organic ferroelectric field-effect transistors used as non-volatile memory. Journal of Applied Physics. 2009 November 5; 106 (9): 094504.

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Copyright © American Institute of Physics, 2009. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at http://link.aip.org/link/?JAPIAU/106/094504/1.