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GaN and InGaN(112_2) surfaces: group-III adlayers and indium incorporation


First-principles calculations of total energy performed for clean and In-rich GaN(112_2) surfaces indicate that indium will, for the same chemical potential, incorporate in higher concentrations on the (112_2) surface than on the (101_0) surface. Because an In atom is larger than the Ga atom it replaces there is an effective repulsive interaction between incorporated In atoms on the surface. On the In-rich (112_2) surface the repulsive interaction is much weaker than it is on the (101_0) surface. For this reason the concentration of indium atoms incorporated in growth on the (112_2) surface can exceed the concentration obtained on the (101_0) surface.

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Northrup, J. E. GaN and InGaN(112_2) surfaces: group-III adlayers and indium incorporation. Applied Physics Letters. 2009 September 28; 95 (13): 133107.


Copyright © American Institute of Physics, 2009. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://link.aip.org/link/?APPLAB/95/133107/1.