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Structure of the {11(2)_0} inversion domain boundary in GaN
- 20th International Conference on Defects in Semiconductors
citation
Northrup, J. E. Structure of the {11(2)_0} inversion domain boundary in GaN. 20th International Conference on Defects in Semiconductors; 1999 July 26-30; Berkeley, CA. In Physica B. 1999 December; 274: 130-133.