Structure of the {11(2)_0} inversion domain boundary in GaN

• 20th International Conference on Defects in Semiconductors

citation

Northrup, J. E. Structure of the {11(2)_0} inversion domain boundary in GaN. 20th International Conference on Defects in Semiconductors; 1999 July 26-30; Berkeley, CA. In Physica B. 1999 December; 274: 130-133.