Low temperature amorphous silicon p-i-n photodiodes
Amorphous silicon p-i-n photodiodes are important for image sensors and solar cells. The paper describes the properties of photodiodes fabricated below 200C on flexible plastic substrates. The increased defect density of the low temperature growth increases the reverse satu-ration current but the forward characteristics are largely unchanged. The role of the dangling bond defects in the diode characteristics is discussed.
Street, R. A.; Wong, W. S.; Lujan, R. A. Low temperature amorphous silicon p-i-n photodiodes. Physica Status Solidi B. 2009 August; 246 (8): 1854-1857.