Effect of grown-in biaxal strain on deep level defects in SiC/Si epitaxial heterostructures

• 20th International Conference on Defects in Semiconductors

citation

Singh, D. V. ; Mitchell, T. O. ; Hoyt, J. L. ; Gibbons, J. F. ; Johnson, N. M. ; Goetz, W. K. Effect of grown-in biaxal strain on deep level defects in SiC/Si epitaxial heterostructures. 20th International Conference on Defects in Semiconductors; 1999 July 26-30; Berkeley, CA. Proceedings in Physica B. 1999 December; 274: 681-684.