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Jet-printed Si nanowires for flexible backplane applications

 

The integration of Si nanowire (Si NW) materials with low-temperature plastic substrates can enhance the performance of low-cost flexible electronics. We report the properties of Si NW thin film transistors (TFTs) fabricated with various contact metals. We demonstrate the use of dielectrophoresis and inkjet printing to pattern and assemble Si NW TFTs from a liquid suspension in a manner that is suitable for display backplane applications.

 
citation

Raychaudhuri, S.; Wong, W. S.; Sambandan, S.; Lujan, R. A.; Street, R. A. Jet-printed Si nanowires for flexible backplane applications. Nanotech Conference 2010 Technical Proceedings; 2010 June 21-24; Anaheim, CA.